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IXBH10N300HV

P1-P3P4-P6
© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 3000 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1M 3000 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 34 A
I
C110
T
C
= 110°C 10 A
I
CM
T
C
= 25°C, 1ms 88 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 10 I
CM
= 80 A
(RBSOA) Clamped Inductive Load 1500 V
T
SC
V
GE
= 15V, T
J
= 125°C,
(SCSOA) R
G
= 82, V
CE
=
1500V, Non-Repetitive 10 μs
P
C
T
C
= 25°C 180 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
F
C
Mounting Force (TO-263HV) 10..65 / 22..14.6 N/lb
M
d
Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in
Weight TO-263HV 2.5 g
TO-247HV 6.0 g
DS100608B(9/15)
IXBA10N300HV
IXBH10N300HV
V
CES
= 3000V
I
C110
= 10A
V
CE(sat)
2.8V
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
Features
High Blocking Voltage
Anti-Parallel Diode
Low Conduction Losses
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
G = Gate C = Collector
E = Emitter Tab = Collector
TO-263HV (IXBA)
G
E
C (Tab)
TO-247HV (IXBH)
C (Tab)
G
E
C
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 3000 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= 0.8 • V
CES
, V
GE
= 0V 25 μA
T
J
= 125°C 500 μA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 10A, V
GE
= 15V, Note 1 2.2 2.8 V
T
J
= 125°C 2.7 V
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBA10N300HV
IXBH10N300HV
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fS
I
C
= 10A, V
CE
= 10V, Note 1 6 11 S
C
ies
1044 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 42 pF
C
res
14 pF
Q
g
46 nC
Q
ge
I
C
= 10A, V
GE
= 15V, V
CE
= 1000V 5 nC
Q
gc
20 nC
t
d(on)
36 ns
t
r
340 ns
t
d(off)
100 ns
t
f
1850 ns
t
d(on)
40 ns
t
r
765 ns
t
d(off)
120 ns
t
f
2010 ns
R
thJC
0.69 °C/W
R
thCS
TO-247HV 0.21 °C/W
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times, T
J
= 125°C
I
C
= 10A, V
GE
= 15V
V
CE
= 960V, R
G
= 10
Resistive Switching Times, T
J
= 25°C
I
C
= 10A, V
GE
= 15V
V
CE
= 960V, R
G
= 10
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 10A, V
GE
= 0V 2.7 V
t
rr
1.6 μs
I
RM
23 A
Q
RM
18.6 μC
I
F
= 5A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
TO-247HV Outline
PINS:
1 - Gate 2 - Emitter
3, 4 - Collector
A
Q
S
A3
e
c
A1
L1
D3
2X
A2
0P
31 2
e1
b
D1
D2
E2
E3
3X
4X
3X
b1
0P1
4
D
L
TO-263HV-2L Outline
PIN: 1 - Gate
2 - Emitter
3 - Collector
E
R
L
c
b
A
H
D
E
E1
L3
L4
A1
D1
E1
b2
c2
e2
A2
e1
L1
3
2
1
© 2015 IXYS CORPORATION, All Rights Reserved
IXBA10N300HV
IXBH10N300HV
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
2
4
6
8
10
12
14
16
18
20
00.511.5 22.5 33.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
9V
8V
5V
7V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
11V
13V
14V
6V
12V
10V
9V
8V
7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
9V
8V
5V
6V
7V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 20A
I
C
= 10A
I
C
= 5A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5 6 7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 20A
T
J
= 25ºC
5A
10A
Fig. 6. Input Admittance
0
4
8
12
16
20
24
28
32
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P6

IXBH10N300HV

Mfr. #:
Buy IXBH10N300HV
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
Lifecycle:
New from this manufacturer.
Delivery:
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