IXBH10N300HV

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBA10N300HV

IXBH10N300HV

Fig. 11. Reverse-Bias Safe Operating Area

0

10

20

30

40

50

60

70

80

90

500 1000 1500 2000 2500 3000

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 10Ω

dv / dt < 10V / ns

Fig. 12. Maximum Transient Thermal Impedance

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 7. Transconductance

0

2

4

6

8

10

12

14

16

18

0 5 10 15 20 25 30 35

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Gate Charge

0

2

4

6

8

10

12

14

16

0 5 10 15 20 25 30 35 40 45 50

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 1kV

I

C

= 10A

I

G

= 10mA

Fig. 10. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

C

ies

C

oes

C

res

Fig. 8. Forward Voltage Drop of Intrinsic Diode

0

10

20

30

40

50

60

00.511.522.533.544.555.5

V

F

- Volts

I

F

- Amperes

V

GE

= 0V

T

J

= 25ºC

125ºC

V

GE

= 15V

© 2015 IXYS CORPORATION, All Rights Reserved

Fig. 14. Resistive Turn-on Rise Time vs.

Collector Current

0

200

400

600

800

1000

1200

5 6 7 8 9 1011121314151617181920

I

C

- Amperes

t

r

- Nanoseconds

R

G

= 10Ω , V

GE

= 15V

V

CE

= 960V

T

J

= 125ºC

T

J

= 25ºC

Fig. 15. Resistive Turn-on Switching Times vs.

Gate Resistance

500

600

700

800

900

1000

1100

10 20 30 40 50 60 70 80 90 100

R

G

- Ohms

t

r

- Nanoseconds

30

40

50

60

70

80

90

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 960V

I

C

= 20A

I

C

= 10A

Fig. 16. Resistive Turn-off Switching Times vs.

Junction Temperature

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

60

70

80

90

100

110

120

130

140

150

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 10Ω, V

GE

= 15V

V

CE

= 960V

I

C

= 20A

I

C

= 10A

Fig. 13. Resistive Turn-on Rise Time vs.

Junction Temperature

200

300

400

500

600

700

800

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 10Ω , V

GE

= 15V

V

CE

= 960V

I

C

= 10A

I

C

= 20A

Fig. 17. Resistive Turn-off Switching Times vs.

Collector Current

800

1200

1600

2000

2400

2800

3200

3600

5 7 9 111315171921

I

C

- Amperes

t

f

- Nanoseconds

50

70

90

110

130

150

170

190

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 10Ω, V

GE

= 15V

V

CE

= 960V

T

J

= 125ºC

T

J

= 25ºC

Fig. 28. Resistive Turn-off Switching Times vs.

Gate Resistance

400

800

1200

1600

2000

2400

2800

10 20 30 40 50 60 70 80 90 100

R

G

- Ohms

t

f

- Nanoseconds

0

100

200

300

400

500

600

t

d

(

off

)

- Nanoseconds

t

f

t

d(off

)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 960V

I

C

= 20A

I

C

= 10A

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBA10N300HV

IXBH10N300HV

IXYS REF: B_10N300(3T-B8-27) 9-16-14-A

IXBA10N300HV

IXBH10N300HV

Fig. 19. Forward-Bias Safe Operating Area

@ T

C

= 25ºC

0.01

0.1

1

10

100

1 10 100 1,000 10,000

V

CE

- Volts

I

C

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

10ms

V

CE(sat)

Limi

t

100µs

DC

100ms

Fig. 20. Forward-Bias Safe Operating Area

@ T

C

= 75ºC

0.01

0.1

1

10

100

1 10 100 1,000 10,000

V

CE

- Volts

I

C

- Amperes

T

J

= 150ºC

T

C

= 75ºC

Single Pulse

25µs

1ms

10ms

V

CE(sat)

Limi

t

100µs

DC

100ms

IXBH10N300HV

Mfr. #:

Buy IXBH10N300HV

Manufacturer:

Littelfuse

Description:

IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT

Lifecycle:

New from this manufacturer.

Delivery:

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IXBH10N300HV