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IRF9620PBF

P1-P3P4-P6P7-P8
Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF9620, SiHF9620
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• P-Channel
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. I
SD
- 3.5 A, dI/dt 95 A/μs, V
DD
V
DS
, T
J
150 °C.
c. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) - 200
R
DS(on)
()V
GS
= - 10 V 1.5
Q
g
(Max.) (nC) 22
Q
gs
(nC) 12
Q
gd
(nC) 10
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRF9620PbF
SiHF9620-E3
SnPb
IRF9620
SiHF9620
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
- 3.5
AT
C
= 100 °C - 2.0
Pulsed Drain Current
a
I
DM
- 14
Linear Derating Factor 0.32 W/°C
Maximum Power Dissipation T
C
= 25 °C P
D
40 W
Peak Diode Recovery dV/dt
b
dV/dt - 5.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
c
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91082
2 S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-3.1
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 μA - 200 - -
V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= - 1 mA - - 0.22 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 200 V, V
GS
= 0 V - - - 100
μA
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C - - - 500
Drain-Source On-State Resistance R
DS(on)
V
GS
= - 10 V I
D
= - 1.5 A
b
--1.5
Forward Transconductance g
fs
V
DS
= - 50 V, I
D
= - 1.5 A
b
1.0 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
- 350 -
pFOutput Capacitance C
oss
- 100 -
Reverse Transfer Capacitance C
rss
-30-
Total Gate Charge Q
g
V
GS
= - 10 V
I
D
= - 4.0 A, V
DS
= - 160 V,
see fig. 11 and 18
b
--22
nC Gate-Source Charge Q
gs
--12
Gate-Drain Charge Q
gd
--10
Turn-On Delay Time t
d(on)
V
DD
= - 100 V, I
D
= - 1.5 A,
R
g
= 50 , R
D
= 67, see fig. 17
b
-15-
ns
Rise Time t
r
-25-
Turn-Off Delay Time t
d(off)
-20-
Fall Time t
f
-15-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--- 3.5
A
Pulsed Diode Forward Current
a
I
SM
--- 14
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= - 3.5 A, V
GS
= 0 V
b
--- 7.0
V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= - 3.5 A, dI/dt = 100 A/μs
b
- 300 450 ns
Body Diode Reverse Recovery Charge Q
rr
-1.92.9μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
91082_01
80 µs Pulse Test
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
- 10
- 5
V
GS
= - 10, - 9, - 8, - 7 V
- 4 V
- 6 V
- 5 V
- 4
0
- 1
- 2
- 3
0
- 50- 40
- 30- 20
91082_02
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain Current (A)
- 2
- 5
- 4
0
- 1
- 2
- 3
0
- 10- 8
- 6- 4
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on)
max.
T
J
= - 55 °C
T
J
= 25 °C
T
J
= 125 °C
91082_03
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
- 1
- 5
- 4
0
- 1
- 2
- 3
0
- 5- 4
- 3- 2
80 µs Pulse Test
V
GS
= - 10, - 9, - 8, - 7 V
- 4 V
- 6 V
- 5 V
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
Negative V
DS
, Drain-to-Source Voltage (V)
Negative I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
2
2
5
0.1
1
2
5
10
2
5
25
110
25
10
2
10
3
25
91082_04
2.0
1.0
0.1
10
-5
10
-4
10
-3
10
-2
0.1 1.0 10
P
DM
t
1
t
2
t
1
, Square Wave Pulse Duration (s)
Z
thJC
(t)/R
thJC
, Normalized Effective Transien
Notes:
1. Duty Factor, D = t
1
/t
2
2. Per Unit Base = R
thJC
= 3.12 °C/W
3. T
JM
- T
C
= P
DM
Z
thJC
(t)
Single Pulse (Transient
Thermal Impedence)
0.2
0.05
0.02
0.01
91082_05
0.1
D = 0.5
0.5
0.2
0.05
0.02
0.01
25 25 25 25 25 25
Thermal Impedence (Per Unit)
P1-P3P4-P6P7-P8

IRF9620PBF

Mfr. #:
Buy IRF9620PBF
Manufacturer:
Vishay
Description:
MOSFET P-CH 200V 3.5A TO-220AB
Lifecycle:
New from this manufacturer.
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