BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 21 April 2011 3 of 13
NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
V
GS
≥ 5 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
T
mb
= 25 °C; I
DM
is single pulse
I
D
= 75 A
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4. Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
40
60
20
80
100
P
der
(%)
0
T
mb
(°C)
0 20015050 100
003aaf455
40
60
20
80
100
I
D
(%)
0
T
mb
(°C)
0 20015050 100
003aaf456
V
DS
(V)
110
3
10
2
10
003aaf457
10
2
10
10
3
I
D
(A)
1
D.C.
10 ms
100 ms
1 ms
100 μs
tp = 10 μs
R
DS(on)
= V
DS
/ I
D
40
60
20
80
100
W
DSS
(%)
0
T
mb
(°C)
20 18014060 100
003aaf470
