BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 21 April 2011 6 of 13
NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
T
j
= 25 °C T
j
= 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
T
j
= 25 °C; I
D
= 25 A V
DS
> I
D
x R
DSon
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
40
60
20
80
100
I
D
(A)
0
V
DS
(V)
0108462
003aaf459
5.0
4.5
5.5
6.5
7.0
7.5
8.0
8.5
9.0
9.5
18
16
12
11.5
V
GS
(V) = 11
10.5
10
6.0
40
50
30
60
70
R
DS(on)
(mΩ)
20
I
D
(A)
0 1008040 6020
003aaf460
6
6.5
7
8
9
10
10
40
30
20
50
R
DS(on)
(mΩ)
V
GS
(V)
6221810 14
V
GS
(V)
01284
40
60
20
80
100
I
D
(A)
0
T
j
= 25 °C T
j
= 175 °C
