FDMS0308CS N-Channel PowerTrench
®
SyncFET
TM
FDMS0308CS Rev.C
www.fairchildsemi.com
2
Electrical Characteristics T
A
= 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 1 mA, V
GS
= 0 V 30 V
'BV
DSS
'T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, referenced to 25 °C 14 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 500 PA
I
GSS
Gate to Source Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 1 mA 1.2 1.6 3.0 V
'V
GS(th)
'T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, referenced to 25 °C -5 mV/°C
r
DS(on)
StaticDrain to Source On Resistance
V
GS
= 10 V, I
D
= 21 A 1.9 3.0
m:V
GS
= 4.5 V, I
D
= 17 A 2.5 3.5
V
GS
= 10 V, I
D
= 21 A, T
J
= 125 °C 2.5 3.8
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 21 A 300 S
(Note 2)
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
3175 4225 pF
C
oss
Output Capacitance 1175 1565 pF
C
rss
Reverse Transfer Capacitance 110 165 pF
R
g
Gate Resistance 1.3 2.6 :
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 21 A,
V
GS
= 10 V, R
GEN
= 6 :
14 25 ns
t
r
Rise Time 612ns
t
d(off)
Turn-Off Delay Time 35 56 ns
t
f
Fall Time 510ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V,
I
D
= 21 A
47 66 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V 22 31 nC
Q
gs
Gate to Source Gate Charge 8.5 nC
Q
gd
Gate to Drain “Miller” Charge 4.9 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2 A (Note 2) 0.43 0.7
V
V
GS
= 0 V, I
S
= 21 A (Note 2) 0.75 1.2
t
rr
Reverse Recovery Time
I
F
= 21 A, di/dt = 300 A/ Ps
35 56 ns
Q
rr
Reverse Recovery Charge 41 67 nC
Notes:
1. R
TJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJC
is guaranteed by design while R
TCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. E
AS
of 98 mJ is based on starting T
J
= 25 °C, L = 1 mH, I
AS
= 14 A, V
DD
= 27 V, V
GS
= 10 V. 100% test at L = 0.3 mH, I
AS
= 21 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
a. 50 °C/W when mounted on a
1 in
2
pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
