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FDMS0308CS

P1-P3P4-P6P7-P8
FDMS0308CS N-Channel PowerTrench
®
SyncFET
TM
FDMS0308CS Rev.C
www.fairchildsemi.com
4
Figure 7.
0 1020304050
0
2
4
6
8
10
I
D
= 21 A
V
DD
= 10 V
V
DD
= 20 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 15 V
Gate Charge Characteristics Figure 8.
0.1 1 10 30
60
100
1000
5000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 100
1
10
T
J
= 100
o
C
300
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
40
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
30
60
90
120
Limited by Package
R
TJC
= 1.9
o
C/W
V
GS
= 4.5 V
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fig u r e 11. F o r w a rd Bi a s S afe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
200
100 Ps
DC
10 s
1 s
100 ms
10 ms
1 ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
TJA
= 125
o
C/W
T
A
= 25
o
C
200
Figure 12.
10
-4
10
-3
10
-2
10
-1
110
100 1000
1
10
100
1000
10000
SINGLE PULSE
R
T
JA
= 125
o
C/W
T
A
= 25
o
C
0.5
V
GS
= 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics T
J
= 25 °C unless otherwise noted
FDMS0308CS N-Channel PowerTrench
®
SyncFET
TM
FDMS0308CS Rev.C
www.fairchildsemi.com
5
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.0001
0.001
0.01
0.1
1
SINGLE PULSE
R
TJA
= 125
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
TJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
TJA
x R
TJA
+ T
A
Typical Characteristics T
J
= 25 °C unless otherwise noted
FDMS0308CS N-Channel PowerTrench
®
SyncFET
TM
FDMS0308CS Rev.C
www.fairchildsemi.com
6
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS0308CS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics (continued)
Figure 14. FDMS0308CS SyncFET body
diode reverse recovery characteristic
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
0 5 10 15 20 25 30
10
-6
10
-5
10
-4
10
-3
10
-2
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
DSS
, REVERSE LEAKAGE CURRENT (A)
V
DS
, REVERSE VOLTAGE (V)
0306090120150
-5
0
5
10
15
20
25
di/dt = 300 A/Ps
CURRENT (A)
TIME (ns)
P1-P3P4-P6P7-P8

FDMS0308CS

Mfr. #:
Buy FDMS0308CS
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Channel PowerTrench SyncFET
Lifecycle:
New from this manufacturer.
Delivery:
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