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MAX4959EUB+T

P1-P3P4-P6P7-P9P10-P12P13-P15
19-0874; Rev 1; 7/14
MAX4959/MAX4960
High-Voltage OVP with Battery Switchover
For pricing, delivery, and ordering information, please contact Maxim Direct
at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com.
General Description
The MAX4959/MAX4960 overvoltage protection con-
trollers protect low-voltage systems against high-volt-
age faults of up to +28V. When the input voltage
exceeds the overvoltage lockout (OVLO) threshold,
these devices turn off an external pFET to prevent dam-
age to the protected components. The undervoltage
lockout (UVLO) threshold holds the external pFET off
until the input voltage rises to the correct level. An addi-
tional safety feature latches off the pFET when an incor-
rect low-power adapter is plugged in.
The MAX4959/MAX4960 control an external battery
switchover pFET (P2) (see Figures 4 and 6) that switches
in the battery when the AC adapter is unplugged. The
undervoltage and overvoltage trip levels can be adjusted
with external resistors.
The input is protected against ±15kV HBM ESD when
bypassed with a 1µF ceramic capacitor to ground. All
devices are available in a small 10-pin (2mm x 2mm)
µDFN and are specified for operation over the extend-
ed -40°C to +85°C temperature range.
Applications
Notebooks
Laptops
Camcorders
Ultra-Mobile PCs
Features
o Overvoltage Protection Up to +28V
o ± 2.5% Accurate Externally Adjustable
OVLO/UVLO Thresholds
o Battery Switchover pFET Control
o Protection Against Incorrect Power Adapter
o Low (100µA Typ) Supply Current
o 25ms Input Debounce Timer
o 25ms Blanking Time
o 10-Pin (2mm x 2mm) µDFN Packages
Ordering Information
PART
TEMP RANGE
PIN -
PA C K A G E
TOP
MARK
MAX4959ELB+
-40°C to +85°C
10 µDFN AAO
MAX4960ELB+
-40°C to +85°C
10 µDFN AAP
123
10 9 8
45
76
GATE2
GND
V
DD
N.C.
GATE1
OVS
IN
N.C.
(SOURCE1)
MAX4959
MAX4960
µDFN
TOP VIEW
CB
UVS
+
( ) MAX4960 ONLY.
Pin Configuration
Typical Operating Circuits appear at end of data sheet.
+
Denotes a lead-free package.
MAX4959/MAX4960
High-Voltage OVP with Battery Switchover
2
Maxim Integrated
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
IN
= +19V, T
A
= -40°C to +85°C, unless otherwise noted, C
VDD
= 100nF. Typical values are at T
A
= +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
IN, SOURCE1, GATE1, GATE2, to GND ................-0.3V to +30V
V
DD
to GND..............................................................-0.3V to +6V
UVS, OVS, CB to GND .............................................-0.3V to +6V
Continuous Power Dissipation (T
A
= +70°C)
10-pin µDFN (derate 5.0mW/°C above +70°C) ...........403mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IN
Input Voltage Range V
IN
428V
Overvoltage Adjustable Trip
Range
OVLO (Note 2) 6 28 V
Overvoltage Comp Reference OV
REF
V
IN
rising edge 1.18 1.228 1.276 V
OVS Input Leakage Current OVI
LKG
-100 +100 nA
Overvoltage Trip Hysteresis OV
HYS
1%
Undervoltage Adjustable Trip
Range
UVLO (Note 2) 5 28 V
Undervoltage Comp Reference UV
REF
V
IN
falling edge 1.18 1.228 1.276 V
UVS Input Leakage Current UVI
LKG
-100 +100 nA
Undervoltage Trip Hysteresis UV
HYS
1%
Internal Undervoltage Trip Level INTUV
REF
V
IN
falling edge 4.1 4.4 4.7 V
Internal Undervoltage Trip
Hysteresis
INTUV
HYS
1%
Power-On Trip Level POTL V
DD
> +3V, IN rising edge 0.5 0.75 1 V
Power-On Trip Hysteresis POTL
HYS
10 %
IN Supply Current I
IN
V
IN
= +19V, V
OVS
< OV
REF
and
V
UVS
> UV
REF
100 300 µA
V
DD
V
DD
Voltage Range V
DD
2.7 5.5 V
V
DD
Undervoltage Lockout V
DDUVLO
V
DD
falling edge 1.55 2.40 V
V
DD
Undervoltage Lockout
Hysteresis
V
D D UV LOHY S
50 mV
V
DD
Supply Current I
VDD
V
DD
= +5V, V
IN
= 0V 10 µA
GATE_
GATE1 Open-Drain MOS R
ON
Resistance
R
ON
V
CB
= 0V, V
IN
= 19V, V
OVS
< OV
REF
and
V
UVS
> UV
REF
, I
GATE_
= 0.5mA (MAX4959)
1kΩ
GATE2 Open-Drain MOS R
ON
Resistance
R
ON
V
CB
= 3V, I
GATE_
= 0.5mA 1 kΩ
MAX4959/MAX4960
High-Voltage OVP with Battery Switchover
3
Maxim Integrated
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= +19V, T
A
= -40°C to +85°C, unless otherwise noted, C
VDD
= 100nF. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
GATE1 Leakage Current G1I
LKG
V
OV S
> OV
R E F
, V
U V S
< U V
R E F
, or V
C B
= + 5V -1 +1 µA
GATE2 Leakage Current G2I
LKG
V
CB
= 0V -1 +1 µA
CB
Logic-Level High V
IH
1.5 V
Logic-Level Low V
IL
0.4 V
CB Pulldown Resistor R
CBPD
123MΩ
TIMING
Debounce Time t
DEB
V
OVP
> V
IN
> V
UVP
for greater than t
DEB
for
GATE1 to go low
10 25 40 ms
GATE1 Assertion Delay from
CB Pin
t1
GATE
CB = +3V to 0
rise time = fall time = 5ns (Note 3)
50 ns
GATE2 Assertion Delay from
CB Pin
t2
GATE
CB = 0 to +3V
rise time = fall time = 5ns (Note 3)
50 ns
Blanking Time t
BLANK
10 25 40 ms
MAX4960
SOURCE1/GATE1 Resistance R
SG
(MAX4960) 140 200 260 kΩ
GATE1/Ground Resistance R
GG
GATE1 Asserted (MAX4960) 140 200 260 kΩ
Note 1: All devices are production tested at T
A
= +25°C. Specifications over temperature are guaranteed by design.
Note 2: Do not exceed absolute maximum rating; the ratio between the externally set OVLO and UVLO threshold must not exceed 4,
[OVLO/UVLO]
MAX
≤ 4.
Note 3: Assertion delay starts from switching of CB pin to reaching of 80% of GATE1/GATE2 transition. This delay is measured without
external capacitive load.
POWER-UP RESPONSE
(R
PULLUP
= 1kΩ)
MAX4959/60 toc01
TIME (μs)
VOLTAGE (V)
100500-50-100
0
2
4
6
8
10
12
-2
-150 150
V
IN
V
DD
V
GATE1
UNDERVOLTAGE RESPONSE
(WITHIN BLANKING TIME)
(R
PULLUP
= 1kΩ)
MAX4959/60 toc03
TIME (μs)
VOLTAGE (V)
605010 20 30 40
2
4
6
8
10
12
14
16
0
070
DRAIN OF P1
V
IN
V
GATE1
Typical Operating Characteristics
(V
OVLO
= 22.2V and V
UVLO
= 10.1V, R1 = 887kΩ, R2 = 66.5kΩ, R3 = 54.9kΩ, all resistors 1%, OV
REF
= UV
REF
= 1.228V.)
P1-P3P4-P6P7-P9P10-P12P13-P15

MAX4959EUB+T

Mfr. #:
Buy MAX4959EUB+T
Manufacturer:
Maxim Integrated
Description:
Current & Power Monitors & Regulators OVP w/Battery Switchover
Lifecycle:
New from this manufacturer.
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