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STTH1212D

P1-P3P4-P6P7-P9
March 2006 Rev 1 1/9
9
STTH1212
Ultrafast recovery - 1200 V diode
Main product characteristics
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
I
F(AV)
12 A
V
RRM
1200 V
T
j
175° C
V
F
(typ) 1.25 V
t
rr
(typ) 50 ns
Part Number Marking
STTH1212D STTH1212D
STTH1212G STTH1212G
STTH1212G-TR STTH1212G
KA
D
2
PAK
STTH1212G
TO-220AC
STTH1212D
K
A
K
A
NC
www.st.com
Characteristics STTH1212
2/9
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.5 x I
F(AV)
+ 0.033 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
I
F(RMS)
RMS forward current 30 A
I
F(AV)
Average forward current, δ = 0.5 T
c
= 130° C 12 A
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 160 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 100 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
Table 2. Thermal parameter
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 1.6 °C/W
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
10
µA
T
j
= 125° C 7 70
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 12 A
2.2
VT
j
= 125° C 1.30 2.0
T
j
= 150° C 1.25 1.9
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH1212 Characteristics
3/9
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
100
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
50 70
I
RM
Reverse recovery current
I
F
= 12 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
16 24 A
S Softness factor
I
F
= 12 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
2
t
fr
Forward recovery time
I
F
= 12 A dI
F
/dt = 50 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25° C
400 ns
V
FP
Forward recovery voltage
I
F
= 12 A, dI
F
/dt = 50 A/µs,
T
j
= 25° C
6V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
0
5
10
15
20
25
30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
P(W)
T
δ
=tp/T
tp
δ = 0.05
δ = 1
I (A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
0
10
20
30
40
50
60
70
80
90
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I (A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
P1-P3P4-P6P7-P9

STTH1212D

Mfr. #:
Buy STTH1212D
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast recovery 1200 V diode
Lifecycle:
New from this manufacturer.
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