Characteristics STTH1212
4/9
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
0
5
10
15
20
25
30
35
40
0 50 100 150 200 250 300 350 400 450 500
I (A)
RM
dI /dt(A/µs)
F
I =2 x I
FF(AV)
I=I
F F(AV)
I =0.5 x I
FF(AV)
V =600V
T =125°C
R
j
Figure 5. Reverse recovery time versus
dI
F
/dt (typical values)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values)
100
150
200
250
300
350
400
450
500
550
600
0 50 100 150 200 250 300 350 400 450 500
t (ns)
rr
dI /dt(A/µs)
F
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
V =600V
T =125°C
R
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 50 100 150 200 250 300 350 400 450 500
Q (µC)
rr
dI /dt(A/µs)
F
V =600V
T =125°C
R
j
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
Figure 7. Softness factor versus dI
F
/dt
(typical values)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 50 100 150 200 250 300 350 400 450 500
S factor
I 2xI
T =125°C
FF(AV)
j
≤
V =600V
R
dI /dt(A/µs)
F
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
25 50 75 100 125
I
RM
Q
RR
S factor
T (°C)
j
I=I
Reference: T =125°C
FF(AV)
j
V =600V
R
t
rr