Electrical characteristics STGB20NC60V, STGP20NC60V, STGW20NC60V
4/20 DocID9982 Rev 6
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 1 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
=15 V, I
C
= 20 A
V
GE
=15 V, I
C
= 20 A,T
C
= 125 °C
1.8
1.7
2.5 V
V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 250 µA 3.75 5.75 V
I
CES
Collector-emitter cut-off
current (V
GE
= 0)
V
CE
= 600 V
V
CE
= 600 V, Tc=125 °C
10
1
µA
mA
I
GES
Gate-emitter cut-off
current (V
CE
= 0)
V
GE
= ±20 V ± 100 nA
g
fs
(1)
1. Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance V
CE
= 15 V
,
I
C
= 20 A 15 S
Table 5. Dynamic electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
=0
-2200- pF
C
oes
Output capacitance - 225 - pF
C
res
Reverse transfer
capacitance
-50- pF
Q
g
Total gate charge
V
CE
= 390 V, I
C
= 20 A,
V
GE
= 15 V,
(see Figure 17)
-100- nC
Q
ge
Gate-emitter charge - 16 - nC
Q
gc
Gate-collector charge - 45 - nC
DocID9982 Rev 6 5/20
STGB20NC60V, STGP20NC60V, STGW20NC60V Electrical characteristics
20
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CC
= 390 V, I
C
= 20 A
R
G
= 3.3 Ω, V
GE
= 15 V,
(see Figure 16)
-31-ns
t
r
Current rise time - 11 - ns
(di/dt)on Turn-on current slope - 1600 - A/µs
t
d(on)
Turn-on delay time
V
CC
= 390 V, I
C
= 20 A
R
G
= 3.3 Ω, V
GE
= 15 V,
T
C
= 125 °C (see Figure 16)
-31-ns
t
r
Current rise time - 11.5 - ns
(di/dt)on Turn-on current slope - 1500 - A/µs
t
r(Voff)
Off voltage rise time
V
cc
= 390 V, I
C
= 20 A,
R
G
= 3.3 Ω, V
GE
= 15 V
(see Figure 18)
-28-ns
t
d(off)
Turn-off delay time - 100 - ns
t
f
Current fall time - 75 - ns
t
r(Voff)
Off voltage rise time
V
cc
= 390 V, I
C
= 20 A,
R
G
=3.3 Ω, V
GE
=15 V,
T
C
=125 °C (see Figure 18)
-66-ns
t
d(off)
Turn-off delay time - 150 - ns
t
f
Current fall time - 130 - ns
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
E
on
Turn-on switching losses
V
CC
= 390 V, I
C
= 20 A
R
G
=3.3 Ω, V
GE
= 15 V,
(see Figure 18)
-220J
E
off
(1)
1. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 330 - µJ
E
ts
Total switching losses - 550 - µJ
E
on
Turn-on switching losses
V
CC
= 390 V, I
C
= 20 A
R
G
=3.3 Ω, V
GE
= 15 V,
T
C
= 125 °C (see Figure 18)
-450J
E
off
(1)
Turn-off switching losses - 770 - µJ
E
ts
Total switching losses - 1220 - µJ
Electrical characteristics STGB20NC60V, STGP20NC60V, STGW20NC60V
6/20 DocID9982 Rev 6
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations

STGP20NC60V

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-Ch 600 Volt 30 Amp
Lifecycle:
New from this manufacturer.
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