NTHS4166NT1G

© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1 Publication Order Number:
NTHS4166N/D
NTHS4166N
Power MOSFET
30 V, 8.2 A, Single N-Channel,
ChipFETt Package
Features
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6
Excellent Thermal Capabilities
This is a Pb-Free Device
Applications
Load Switching
DC-DC Converters
Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage V
DSS
30 V
Gate-to-Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
6.6
A
T
A
= 85°C 4.8
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
1.5 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
4.9
A
T
A
= 85°C 3.6
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.8 W
Continuous Drain
Current R
q
JA
, t v 5 s
(Note 1)
Steady
State
T
A
= 25°C
I
D
8.2
A
T
A
= 85°C 5.9
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.2 W
Pulsed Drain Current TA = 25°C,
t
p
= 10 ms
I
DM
32 A
Operating Junction and Storage Temperature T
J
,
T
STG
-55 to
150
°C
Source Current (Body Diode) R
q
JF
I
S
2.6 A
Single Pulse Drain-to-Source Avalanche
Energy T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 20 A
pk
, L = 0.1 mH, R
G
= 25 W
EAS 20 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq. pad, 1 oz Cu.
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
ChipFET
CASE 1206A
STYLE 1
MARKING DIAGRAM
AND PIN ASSIGNMENT
http://onsemi.com
466 M
G
466 = Specific Device Code
M = Month Code
G = Pb-Free Package
1
8
30 V
27 mW @ 4.5 V
22 mW @ 10 V
R
DS(on)
Max
8.2 A
I
D
MaxV
(BR)DSS
N-Channel MOSFET
D
S
G
Device Package Shipping
ORDERING INFORMATION
NTHS4166NT1G ChipFET
(Pb-Free)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DDD
S
DDD
G
1
NTHS4166N
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction-to-Ambient – Steady State (Note 3)
R
q
JA
86
°C/W
Junction-to-Ambient – t 5 s (Note 3)
R
q
JA
57
Junction-to-Ambient – t 5 s (Note 4)
R
q
JA
155
Junction-to-Foot (Drain) Steady State (Note 3)
R
q
JF
20
3. Surface Mounted on FR4 Board using 1 in sq. pad, 1 oz Cu.
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
18.3 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 30 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.1 2.3 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
5.5 mV/°C
Drain-to-Source On-Resistance R
DS(on)
V
GS
= 10 V, I
D
= 4.9 A 18 22
mW
V
GS
= 4.5 V, I
D
= 3.7 A 23 27
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 4.9 A 9.0 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
900
pF
Output Capacitance C
OSS
210
Reverse Transfer Capacitance C
RSS
140
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 4.9 A
9.2
nC
Threshold Gate Charge Q
G(TH)
0.85
Gate-to-Source Charge Q
GS
2.86
Gate-to-Drain Charge Q
GD
3.84
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V, I
D
= 4.9 A 18 nC
Gate Resistance R
G
1.6
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 4.9 A, R
G
= 3.0 W
12
ns
Rise Time t
r
13
Turn-Off Delay Time t
d(off)
16
Fall Time t
f
5.0
Turn-On Delay Time t
d(on)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 4.9 A, R
G
= 3.0 W
8.0
ns
Rise Time t
r
11
Turn-Off Delay Time t
d(off)
20
Fall Time t
f
4.0
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTHS4166N
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3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter UnitsMaxTypMinTest ConditionsSymbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 5.2 A
T
J
= 25°C 0.83 1.0 V
T
J
= 125°C 0.7
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
= 5.2 A,
dI
S
/dt = 100 A/ms
16
ns
Charge Time t
a
7.5
Discharge Time t
b
8.5
Reverse Recovery Charge Q
RR
6.0 nC
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.

NTHS4166NT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET CHPFT SNGL 30V 8.2A NFET
Lifecycle:
New from this manufacturer.
Delivery:
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