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NTF3055L108T1G

P1-P3P4-P6
Publication Order Number:
NTF3055L108/D
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 9
1
NTF3055L108,
NVF3055L108
Power MOSFET
3.0 A, 60 V, Logic Level, N−Channel
SOT−223
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 10 ms)
V
GS
± 15
± 20
Vdc
Vpk
Drain Current
− Continuous @ T
A
= 25°C (Note 1)
− Continuous @ T
A
= 100°C (Note 2)
− Single Pulse (t
p
≤ 10 ms)
I
D
I
D
I
DM
3.0
1.4
9.0
Adc
Apk
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above 25°C
P
D
2.1
1.3
0.014
Watts
Watts
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55
to 175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 7.0 Apk, L = 3.0 mH, V
DS
= 60 Vdc)
E
AS
74 mJ
Thermal Resistance
−Junction−to−Ambient (Note 1)
−Junction−to−Ambient (Note 2)
R
q
JA
R
q
JA
72.3
114
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 1 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 oz. (Cu. Area 0.272 in
2
).
D
G
S
1
2
3
4
3.0 A, 60 V
R
DS(on)
= 120 mW
N−Channel
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
AYW
3055LG
G
3055L = Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
321
4
Gate Drain Source
Drain
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
www.
onsemi.com
NTF3055L108, NVF3055L108
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
68
68
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
− − ± 100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.68
4.6
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 1.5 Adc)
R
DS(on)
− 92 120
mW
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc)
(V
GS
= 5.0 Vdc, I
D
= 1.5 Adc, T
J
= 150°C)
V
DS(on)
− 0.290
0.250
0.43
−
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 3.0 Adc)
g
fs
− 5.7 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
− 313 440
pF
Output Capacitance C
oss
− 112 160
Transfer Capacitance C
rss
− 40 60
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 3.0 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1 W) (Note 3)
t
d(on)
− 11 25
ns
Rise Time t
r
− 35 70
Turn−Off Delay Time t
d(off)
− 22 45
Fall Time t
f
− 27 60
Gate Charge
(V
DS
= 48 Vdc, I
D
= 3.0 Adc,
V
GS
= 5.0 Vdc) (Note 3)
Q
T
− 7.6 15
nC
Q
1
− 1.4 −
Q
2
− 4.0 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
T
J
= 150°C) (Note 3)
V
SD
−
−
0.87
0.72
1.0
−
Vdc
Reverse Recovery Time
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 35 −
ns
t
a
− 21 −
t
b
− 14 −
Reverse Recovery Stored Charge Q
RR
− 0.044 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
NTF3055L108, NVF3055L108
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
0
0.16
0.14
0.12
0.1
0.08
0.02
146
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 10 V
2
1.8
1.6
1.4
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
−50 50250−25 75 125100
I
D
= 1.5 A
V
GS
= 5 V
0.8
0.6
150
1
10
1000
10000
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
04060302010 50
100
53
0
2
5
321
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0
0.5
6
V
GS
= 5 V
V
GS
= 2.5 V
V
GS
= 6 V
V
GS
= 10 V
V
GS
= 3 V
4
1
1.5 2.5 15241.5 2.5 3 3.5 4.5
0.06
0.04
2
1.2
3
2
5
0
6
4
1
3
0
0.16
0.14
0.12
0.1
0.08
0.02
14653
0.06
0.04
2
1
175
V
GS
= 2.8 V
V
GS
= 3.2 V
V
GS
= 3.4 V
V
GS
= 3.5 V
V
GS
= 4.5 V
T
J
= 150°C
T
J
= 100°C
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
V
DS
> = 10 V
V
GS
= 0 V
P1-P3P4-P6

NTF3055L108T1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 3A N-Channel
Lifecycle:
New from this manufacturer.
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