NTF3055L108T1G

NTF3055L108, NVF3055L108
www.onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
10 10 155020525
R
DS(on)
LIMIT
V
GS
10
1
0.1
0.001
1000
10
1
6
5
4
3
2
1
0
60
20
10
0
3.2
2.8
2.4
2
0
1000
800
600
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
C, CAPACITANCE (pF)
400
200
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
057
6
428
1 10 100 0.54 0.7 0.820.660.62 0.860.58
0.1 10 10001 25 125 15010075 17
5
50
I
D
= 3 A
T
J
= 25°C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
1.6
1.2
0.74 0.78
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
V
DS
= 30 V
I
D
= 3 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25°C
I
D
= 7 A
1 ms
100 ms
10 ms
dc
t
r
t
d(off)
t
d(on)
V
DS
0.
9
0.01
30
40
50
Q
2
Q
1
Q
T
70
80
0
31
100
0.8
0.4
t
f
THERMAL LIMIT
PACKAGE LIMIT
100
NTF3055L108, NVF3055L108
www.onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
0.01
1001010.10.001 100
0
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
t, TIME (s)
Figure 13. Thermal Response
1
0.1
0.010.00010.000001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00001
ORDERING INFORMATION
Device Package Shipping
NTF3055L108T1G SOT−223 (TO−261)
(Pb−Free)
1000 / Tape & Reel
NVF3055L108T1G SOT−223 (TO−261)
(Pb−Free)
1000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTF3055L108, NVF3055L108
www.onsemi.com
6
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059
ǒ
mm
inches
Ǔ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b 0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c 0.24 0.29 0.35 0.009
D 6.30 6.50 6.70 0.249
E 3.30 3.50 3.70 0.130
e 2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
H
E
e1
0° 10° 0° 10°
q
q
L
L 0.20 −− −− 0.008 −−− −−−
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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P
UBLICATION ORDERING INFORMATION
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NTF3055L108/D
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NTF3055L108T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 3A N-Channel
Lifecycle:
New from this manufacturer.
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