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Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
Vishay Siliconix
SiR432DP
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
100 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
100
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
- 8.6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
24V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
1
µA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≤ 5 V, V
GS
= 10 V
40 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 8.6 A
0.0255 0.0306
Ω
V
GS
= 7.5 V, I
D
= 8.3 A
0.0272 0.0327
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 8.6 A
38 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
1170
pFOutput Capacitance
C
oss
115
Reverse Transfer Capacitance
C
rss
45
Total Gate Charge
Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 8.6 A
21 32
nC
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 8.6 A
15.5 24
Gate-Source Charge
Q
gs
5.9
Gate-Drain Charge
Q
gd
5.4
Gate Resistance
R
g
f = 1 MHz 0.2 0.9 1.8 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 50 V, R
L
= 7.2 Ω
I
D
≅ 6.9 A, V
GEN
= 10 V, R
g
= 1 Ω
12 20
ns
Rise Time
t
r
10 20
Turn-Off Delay Time
t
d(off)
20 30
Fall Time
t
f
816
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 50 V, R
L
= 7.2 Ω
I
D
≅ 6.9 A, V
GEN
= 7.5 V, R
g
= 1 Ω
14 21
Rise Time
t
r
918
Turn-Off Delay Time
t
d(off)
18 27
Fall Time
t
f
816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
40
A
Pulse Diode Forward Current
a
I
SM
40
Body Diode Voltage
V
SD
I
S
= 6.9 A
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 6.9 A, dI/dt = 100 A/µs, T
J
= 25 °C
43 65 ns
Body Diode Reverse Recovery Charge
Q
rr
80 120 nC
Reverse Recovery Fall Time
t
a
33
ns
Reverse Recovery Rise Time
t
b
10
