OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIR432DP-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
Vishay Siliconix
SiR432DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
= 25 °C
0.010
0.030
0.050
0.070
0.090
45678 910
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1.5
2.0
2.5
3.0
3.5
- 50 - 25 0 25 50 75 100 125 150
I
D
=250µA
V
GS(th)
(V)
T
J
- Temperature (°C)
0
50
100
150
200
250
011100.00.010.1
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
I
D
- Drain Current (A)
0.1
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
Limited byR
DS(on)
*
BVDSS
Limited
1ms
100 µs
1s
10 s
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
www.vishay.com
5
Vishay Siliconix
SiR432DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
8
16
24
32
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating
0.0
0.6
1.2
1.8
2.4
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
Vishay Siliconix
SiR432DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65163
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
1
10
100010
-1
10
-4
100
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
1
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
Duty Cycle = 0.5
0.05
0.02
Single Pulse
0.1
1
0.1
0.01
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
P1-P3P4-P6P7-P7

SIR432DP-T1-GE3

Mfr. #:
Buy SIR432DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI7454DDP-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet