NCP1380DDR2G Datasheet NCP1380BDR2G, NCP1380DDR2G, NCP1380ADR2G | P7-P9

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7

ELECTRICAL CHARACTERISTICS (continued) (Unless otherwise noted: For typical values T

J

= 25°C, V

CC

= 12 V, V

ZCD

= 0 V,

V

FB

= 3 V, V

CS

= 0 V, V

fault

= 1.5 V, C

T

= 680 pF) For min/max values T

J

= −40°C to +125°C, Max T

J

= 150°C, V

CC

= 12 V)

Symbol UnitMaxTypMinCondition

CURRENT COMPARATOR − CURRENT SENSE

V

OPP(MAX)

Setpoint decrease for V

ZCD

= −300 mV (Note 5) V

ZCD

= −300 mV, V

FB

= 4 V,

V

CS

increasing

35 37.5 40 %

V

CS(stop)

Threshold for immediate fault protection activation 1.125 1.200 1.275 V

t

BCS

Leading Edge Blanking Duration for V

CS(stop)

− 120 − ns

DRIVE OUTPUT − GATE DRIVE

R

SNK

R

SRC

Drive Resistance

DRV Sink

DRV Source

V

DRV

= 10 V

V

DRV

= 2 V

−

12.5

20

−

W

I

SNK

I

SRC

Drive current capability

DRV Sink

DRV Source

V

DRV

= 10 V

V

DRV

= 2 V

−

800

500

−

mA

t

r

Rise Time (10% to 90%) C

DRV

= 1 nF, V

DRV

from 0 to

12 V

− 40 75 ns

t

f

Fall Time (90% to 10%) C

DRV

= 1 nF, V

DRV

from 0 to

12 V

− 25 60 ns

V

DRV(low)

DRV Low Voltage V

CC

= V

CC(off)

+ 0.2 V

C

DRV

= 1 nF, R

DRV

= 33 kW

8.4 9.1 − V

V

DRV(high)

DRV High Voltage (Note 6) V

CC

= V

CC(MAX)

C

DRV

= 1 nF

10.5 13.0 15.5 V

DEMAGNETIZATION INPUT − ZERO VOLTAGE DETECTION CIRCUIT

V

ZCD(TH)

ZCD threshold voltage V

ZCD

decreasing 35 55 90 mV

V

ZCD(HYS)

ZCD hysteresis V

ZCD

increasing 15 35 55 mV

V

CH

V

CL

Input clamp voltage

High state

Low state

I

pin1

= 3.0 mA

I

pin1

= −2.0 mA

8

−0.9

10

−0.7

12

−0.3

V

t

DEM

Propagation Delay V

ZCD

decreasing from 4 V to

−0.3 V

− 150 250 ns

C

PAR

Internal input capacitance − 10 − pF

t

BLANK

Blanking delay after on−time 2.30 3.15 4.00

ms

t

outSS

t

out

Timeout after last demag transition During soft−start

After the end of soft−start

28

5.0

41

5.9

54

6.7

ms

R

ZCD(pdown)

Pulldown resistor (Note 3) 140 320 700

kW

TIMING CAPACITOR

V

CT(MAX)

Maximum voltage on C

T

pin V

FB

< V

FB(TH)

5.15 5.40 5.65 V

I

CT

Source current V

CT

= 0 V 18 20 22

mA

V

CT(MIN)

Minimum voltage on C

T

pin, discharge switch

activated

− − 90 mV

C

T

Recommended timing capacitor value 220 pF

FEEDBACK SECTION

R

FB(pullup)

Internal pullup resistor 15 18 22

kW

I

ratio

Pin FB to current setpoint division ratio 3.8 4.0 4.2

V

FB(TH)

FB pin threshold under which C

T

is clamped to

V

CT(MAX)

0.26 0.3 0.34 V

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8

ELECTRICAL CHARACTERISTICS (continued) (Unless otherwise noted: For typical values T

J

= 25°C, V

CC

= 12 V, V

ZCD

= 0 V,

V

FB

= 3 V, V

CS

= 0 V, V

fault

= 1.5 V, C

T

= 680 pF) For min/max values T

J

= −40°C to +125°C, Max T

J

= 150°C, V

CC

= 12 V)

Symbol UnitMaxTypMinCondition

FEEDBACK SECTION

V

H2D

V

H3D

V

H4D

V

HVCOD

V

HVCOI

V

H4I

V

H3I

V

H2I

Valley threshold

FB voltage where 1

st

valley ends and 2

nd

valley

starts

FB voltage where 2

nd

valley ends and 3

rd

valley

starts

FB voltage where 3

rd

valley ends and 4

th

valley

starts

FB voltage where 4

th

valley ends and VCO starts

FB voltage where VCO ends and 4

th

valley starts

FB voltage where 4

th

valley ends and 3

rd

valley

starts

FB voltage where 3

rd

valley ends and 2

nd

valley

starts

FB voltage where 2

nd

valley ends and 1

st

valley

starts

V

FB

decreases

V

FB

decreases

V

FB

decreases

V

FB

decreases

V

FB

increases

V

FB

increases

V

FB

increases

V

FB

increases

1.316

1.128

0.846

0.732

1.316

1.504

1.692

1.880

1.4

1.2

0.9

0.8

1.4

1.6

1.8

2.0

1.484

1.272

0.954

0.828

1.484

1.696

1.908

2.120

V

FAULT PROTECTION (ALL VERSIONS)

T

SHDN

Thermal Shutdown Device switching (F

SW

around 65 kHz)

140 − 170 °C

T

SHDN(HYS)

Thermal Shutdown Hysteresis − 40 − °C

t

OVLD

Overload Timer V

FB

= 4 V, V

CS

> V

ILIM

75 85 95 ms

t

SSTART

Soft−start duration V

FB

= 4 V, V

CS

ramping up,

measured from 1

st

DRV

pulse to V

CS(peak)

= 90% of

V

ILIM

2.8 3.8 4.8 ms

R

Fault(clamp)

Clamp series resistor 1.3 1.55 1.8

kW

V

OVP

Fault detection level for OVP V

Fault

increasing 2.35 2.5 2.65 V

t

latch(delay)

Delay before latch confirmation 22.5 30 37.5

ms

FAULT PROTECTION A & B VERSIONS

I

OTP(REF)

Reference current for direct connection of an

NTC (Note 7)

V

Fault

= V

OTP

+ 0.2 V 85 91 97

mA

V

OTP

Fault detection level for OTP V

Fault

decreasing 0.744 0.8 0.856 V

V

Fault(clamp)

Clamped voltage (Fault pin left open) Fault pin open 1.13 1.35 1.57 V

FAULT PROTECTION C & D VERSIONS

V

BO

Brown−Out level V

Fault

decreasing 0.744 0.8 0.856 V

I

BO

Sourced hysteresis current V

Fault

> V

BO

V

Fault

= V

BO

+ 0.2 V 9 10 11

mA

t

BO(delay)

Delay before entering and exiting Brown−out 22.5 30 37.5

ms

V

Fault(clamp)

Clamped voltage (Fault pin left open) Fault pin open 1.0 1.2 1.4 V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Guaranteed by design.

4. The peak current setpoint goes down as the load decreases. It is frozen below I

peak(VCO)

(I

peak

= cst)

5. If negative voltage in excess to −300 mV is applied to ZCD pin, the current setpoint decrease is no longer guaranteed to be linear

6. Minimum value for T

J

= 125°C

7. NTC with R

110

= 8.8 kW.

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9

17.00

17.05

17.10

17.15

17.20

17.25

17.30

−40 −20 0 20 40 60 80 100 120

Figure 5. V

CC(on)

vs. Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C)

V

CC(on)

, (V)

8.70

8.75

8.80

8.85

8.90

8.95

9.00

−40 −20 0 20 40 60 80 100 120

Figure 6. V

CC(off)

vs. Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C)

V

CC(off)

, (V)

1.30

1.40

1.50

1.60

1.70

1.80

1.90

−40 −20 0 20 40 60 80 100 120

Figure 7. I

CC2

vs. Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C)

I

CC2

, (mA)

2.20

2.30

2.40

2.50

2.60

2.70

2.80

−40 −20 0 20 40 60 80 100 120

T

J

, JUNCTION TEMPERATURE (°C)

Figure 8. I

CC3A

vs. Junction Temperature

I

CC3A

, (mA)

1.60

1.70

1.80

1.90

2.00

2.10

2.20

2.30

2.40

−40 −20 0 20 40 60 80 100 120

Figure 9. I

CC3B

vs. Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C)

I

CC3B

, (mA)

6.0

6.5

7.0

7.5

8.0

8.5

9.0

9.5

10.0

−40 −20 0 20 40 60 80 100 120

I

CC(start)

, (mA)

T

J

, JUNCTION TEMPERATURE (°C)

Figure 10. I

CC(start)

vs. Junction Temperature

NCP1380DDR2G

NCP1380DDR2G

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