OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TIP142G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 6
1 Publication Order Number:
TIP140/D
TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low frequency
switching applications.
Features
• High DC Current Gain −
Min h
FE
= 1000 @ I
C
= 5.0 A, V
CE
= 4 V
• Collector−Emitter Sustaining Voltage − @ 30 mA
V
CEO(sus)
= 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
Collector − Emitter Voltage V
CEO
60 80 100 Vdc
Collector − Base Voltage V
CB
60 80 100 Vdc
Emitter − Base Voltage V
EB
5.0 Vdc
Collector Current
− Continuous
− Peak (Note 1)
I
C
10
15
Adc
Base Current − Continuous I
B
0.5 Adc
Total Power Dissipation
@ T
C
= 25_C
P
D
125 W
Operating and Storage
Junction Temperature Range
T
J
, T
stg
−65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
q
JC
1.0 °C/W
Thermal Resistance,
Junction−to−Ambient
R
q
JA
35.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 5 ms, v 10% Duty Cycle.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
2
MARKING DIAGRAMS
AYWWG
TIP14x
TIP14x
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
TIP14x = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
TO−247
TO−218
DARLINGTON SCHEMATICS
BASE
EMITTER
COLLECTOR
≈ 8.0 k ≈ 40
BASE
EMITTER
COLLECTOR
≈ 8.0 k ≈ 40
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
ORDERING INFORMATION
Device Package Shipping
TIP140G SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP141G SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP142G SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP145G SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP146G SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP147G SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP140G TO−247
(Pb−Free)
30 Units / Rail
TIP141G TO−247
(Pb−Free)
30 Units / Rail
TIP142G TO−247
(Pb−Free)
30 Units / Rail
TIP145G TO−247
(Pb−Free)
30 Units / Rail
TIP146G TO−247
(Pb−Free)
30 Units / Rail
TIP147G TO−247
(Pb−Free)
30 Units / Rail
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mA, I
B
= 0) TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
V
CEO(sus)
60
80
100
−
−
−
−
−
−
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0) TIP140, TIP145
(V
CE
= 40 Vdc, I
B
= 0) TIP141, TIP146
(V
CE
= 50 Vdc, I
B
= 0) TIP142, TIP147
I
CEO
−
−
−
−
−
−
2.0
2.0
2.0
mA
Collector Cutoff Current
(V
CB
= 60 V, I
E
= 0) TIP140, TIP145
(V
CB
= 80 V, I
E
= 0) TIP141, TIP146
(V
CB
= 100 V, I
E
= 0) TIP142, TIP147
I
CBO
−
−
−
−
−
−
1.0
1.0
1.0
mA
Emitter Cutoff Current (V
BE
= 5.0 V) I
EBO
− − 2 0 mA
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 5.0 A, V
CE
= 4.0 V)
(I
C
= 10 A, V
CE
= 4.0 V)
h
FE
1000
500
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 5.0 A, I
B
= 10 mA)
(I
C
= 10 A, I
B
= 40 mA)
V
CE(sat)
−
−
−
−
2.0
3.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= 10 A, I
B
= 40 mA)
V
BE(sat)
− − 3.5 Vdc
Base−Emitter On Voltage
(I
C
= 10 A, V
CE
= 4.0 Vdc)
V
BE(on)
− − 3.0 Vdc
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
(V
CC
= 30 V, I
C
= 5.0 A,
I
B
= 20 mA, Duty Cycle v 2.0%,
I
B1
= I
B2
, R
C
& R
B
Varied, T
J
= 25_C)
t
d
− 0.15 −
ms
Rise Time t
r
− 0.55 −
ms
Storage Time t
s
− 2.5 −
ms
Fall Time t
f
− 2.5 −
ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Figure 1. Switching Times Test Circuit
10
0.2
Figure 2. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
5.0
2.0
0.5
0.1
0.5 1.0 3.0 5.0 10 20
0.2
PNP
NPN
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0
V
2
approx
+12 V
V
1
appox.
-8.0 V
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1.0%
25 ms
0
R
B
51
D
1
+4.0 V
V
CC
-30 V
R
C
TUT
≈ 8.0 k
≈ 40
SCOPE
for t
d
and t
r
, D1 is disconnected
and V
2
= 0
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
For NPN test circuit reverse diode and voltage polarities.
1.0
P1-P3P4-P6P7-P8

TIP142G

Mfr. #:
Buy TIP142G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 10A 100V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet