TIP142G

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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4
V
CE(SAT)
, COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
5000
0.5
Figure 3. DC Current Gain versus Collector Current
I
C
, COLLECTOR CURRENT (AMPS)
300
1.0 2.0 3.0 5.0 7.0 10
500
h
FE
, DC CURRENT GAIN
V
CE
= 4.0 V
4.0
NPN
TIP140, TIP141, TIP142
PNP
TIP145, TIP146, TIP147
Figure 4. CollectorEmitter Saturation Voltage
5.0
-75
T
J
, JUNCTION TEMPERATURE (°C)
0.5
I
C
= 10 A, I
B
= 4.0 mA
2.0
3.0
4.0
-75
T
J
, JUNCTION TEMPERATURE (°C)
-25 25 75 175
3.6
3.2
2.8
2.4
0.8
Figure 5. BaseEmitter Voltage
2000
1000
T
J
= 150°C
25°C
-55°C
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
125
20,000
1000
2000
3000
5000
10,000
7000
1.0
0.7
0.5
V
CE(SAT)
, COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
0.5 1.0 2.0 3.0 5.0 7.0 104.00.7
-50 -25 0 25 50 75 100 125 150
175
5.0
-75
2.0
3.0
1.0
0.7
-50 -25 0 25 50 75 100 125 150
175
2.0
1.6
1.2
4.0
-75 -25 25 75 175
3.6
3.2
2.8
2.4
0.8
125
2.0
1.6
1.2
100°C
T
J
= 150°C
100°C
25°C
-55°C
V
CE
= 4.0 V
I
C
= 5.0 A, I
B
= 10 mA
I
C
= 1.0 A, I
B
= 2.0 mA
I
C
= 10 A, I
B
= 4.0 mA
I
C
= 5.0 A, I
B
= 10 mA
I
C
= 1.0 A, I
B
= 2.0 mA
V
CE
= 4.0 V
I
C
= 10 A
5.0 A
1.0 A
V
CE
= 4.0 V
I
C
= 10 A
5.0 A
1.0 A
TYPICAL CHARACTERISTICS
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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5
ACTIVEREGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ T
C
= 25°C
Figure 6. ActiveRegion Safe Operating Area
dc
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
I
C
, COLLECTOR CURRENT (AMP) (mA)
10
10
0.2
5.0
20
1.0
20
T
J
= 150°C
5030
TIP140, 145
3.0
7.0
15 70 100
TIP141, 146
TIP142, 147
I
C
, COLLECTOR CURRENT (AMPS)
15
10
1.0
2.0
5.0
7.0
Figure 7. Unclamped Inductive Load
L, UNCLAMPED INDUCTIVE LOAD (mH)
0.5 1.0 2.0 5.0 10 20 50 100
100 mJ
INPUT
MPS-U52
50
50
R
BB1
1.5k
R
BB2
= 100
V
BB2
= 0
V
BB1
= 10 V
TUT
V
CE
MONITOR
100 mH
V
CC
= 20 V
I
C
MONITOR
R
S
= 0.1
TEST CIRCUIT
NOTE 1: Input pulse width is increased until I
CM
= 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
V
CE(sat)
-20 V
COLLECTOR
VOLTAGE
V
(BR)CER
w 7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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6
P
D
, POWER DISSIPATION (WATTS)
PNP
NPN
Figure 9. Magnitude of Common Emitter
SmallSignal ShortCircuit Forward
Current Transfer Ratio
f, FREQUENCY (MHz)
2.0
1.0
10
5.0
100
1.0
3.0 5.0
7.0
2.0 7.0 10
V
CE
= 10 V
I
C
= 1.0 A
T
J
= 25°C
5.0
4.0
0
1.0
2.0
3.0
Figure 10. FreeAir Temperature Power Derating
T
A
, FREE-AIR TEMPERATURE (°C)
0 40 80 120 160 200
h
fe
, SMALL-SIGNAL FORWARD CURRENT
TRANSFER RATIO
20
50
70
PNP
NPN

TIP142G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 10A 100V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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