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IRF7526D1TR

P1-P3P4-P6P7-P8
IRF7526D1
FETKY
MOSFET & Schottky Diode
TM
Description
l Co-packaged HEXFET
Power
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low V
F
Schottky Rectifier
l Generation 5 Technology
l Micro8
TM
Footprint
V
DSS
= -30V
R
DS(on)
= 0.20Ω
Schottky Vf = 0.39V
Micro8
TM
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
SD
≤ -1.2A, di/dt ≤ 160A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
5/7/99
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
www.irf.com 1
Absolute Maximum Ratings
Parameter Maximum Units
R
θJA
Junction-to-Ambient ➃ 100 °C/W
Thermal Resistance Ratings
Parameter Maximum Units
I
D
@ T
A
= 25°C -2.0
I
D
@ T
A
= 70°C -1.6
I
DM
Pulsed Drain Current ➀ -16
P
D
@T
A
= 25°C 1.25
P
D
@T
A
= 70°C 0.8
Linear Derating Factor 10 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to +150 °C
Continuous Drain Current, V
GS
@ -4.5V
Power Dissipation
A
W
The FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
TM
package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8
TM
an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
TM
will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
PD -91649C
IRF7526D1
2 www.irf.com
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250µA
––– 0.17 0.20 V
GS
= -10V, I
D
= -1.2A
––– 0.30 0.40 V
GS
= -4.5V, I
D
= -0.60A
V
GS(th)
Gate Threshold Voltage -1.0 ––– ––– V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 0.94 ––– ––– S V
DS
= -10V, I
D
= -0.60A
––– ––– -1.0 V
DS
= -24V, V
GS
= 0V
––– ––– -25 V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 7.5 11 I
D
= -1.2A
Q
gs
Gate-to-Source Charge ––– 1.3 1.9 nC V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 V
GS
= -10V, See Fig. 6
t
d(on)
Turn-On Delay Time ––– 9.7 ––– V
DD
= -15V
t
r
Rise Time ––– 12 ––– I
D
= -1.2A
t
d(off)
Turn-Off Delay Time ––– 19 ––– R
G
= 6.2Ω
t
f
Fall Time ––– 9.3 ––– R
D
= 12Ω,
C
iss
Input Capacitance ––– 180 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 87 ––– pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
I
GSS
Ω
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current(Body Diode) ––– ––– -1.25
I
SM
Pulsed Source Current (Body Diode) ––– ––– -9.6
V
SD
Body Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.2A, V
GS
= 0V
t
rr
Reverse Recovery Time (Body Diode) ––– 30 45 ns T
J
= 25°C, I
F
= -1.2A
Q
rr
Reverse Recovery Charge ––– 37 55 nC di/dt = 100A/µs
A
MOSFET Source-Drain Ratings and Characteristics
Parameter Max. Units Conditions
I
F(av)
Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, T
A
= 25°C
1.3 T
A
= 70°C
I
SM
Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
A
A
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
V
FM
Max. Forward voltage drop 0.50 I
F
= 1.0A, T
J
= 25°C
0.62 I
F
= 2.0A, T
J
= 25°C
0.39 I
F
= 1.0A, T
J
= 125°C
0.57 I
F
= 2.0A, T
J
= 125°C.
I
RM
Max. Reverse Leakage current 0.06 V
R
= 30V T
J
= 25°C
16 T
J
= 125°C
C
t
Max. Junction Capacitance 92 pF V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/µs Rated V
R
Schottky Diode Electrical Specifications
V
mA
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
See Fig. 14
IRF7526D1
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
0.1
1
10
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
0.1
1
10
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -1.2A
D
Power Mosfet Characteristics
P1-P3P4-P6P7-P8

IRF7526D1TR

Mfr. #:
Buy IRF7526D1TR
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 2A MICRO8
Lifecycle:
New from this manufacturer.
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