IRF7526D1TR

P1-P3 P4-P6 P7-P8

IRF7526D1

4 www.irf.com

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

0

4

8

12

16

20

024681012

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Char

g

e

(

nC

)

V = -24V

V = -15V

DS

DS

I = -1.2A

D

FOR TEST CIRCUIT

SEE FIGURE 9

0.1

1

10

100

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 25°C

T = 150°C

Sin

g

le Pulse

A

-I , Drain Current (A)

-V , Drain-to-Source Volta

g

e

(

V

)

DS

D

A

J

100µs

1ms

10ms

0

100

200

300

400

1 10 100

C, Capacitance (pF)

A

DS

-V , Drain-to-Source Volta

g

e

(

V

)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0.1

1

10

0.4 0.6 0.8 1.0 1.2 1.4

T = 25°C

T = 150°C

J

J

V = 0V

GS

SD

SD

A

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

Power Mosfet Characteristics

IRF7526D1

www.irf.com 5

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical On-Resistance Vs. Drain

Current

R

DS

(on) , Drain-to-Source On Resistance (Ω)

Fig 11. Typical On-Resistance Vs. Gate

Voltage

R

DS

(on) , Drain-to-Source On Resistance (Ω)

0.0

0.5

1.0

1.5

01234

A

VGS = -10V

VGS = -4.5V

D

-I , Drain Current (A)

0.10

0.20

0.30

0.40

0.50

0.60

3 6 9 12 15

A

I = -2.0A

GS

-V , Gate-to-Source Voltage (V)

Power Mosfet Characteristics

IRF7526D1

6 www.irf.com

Schottky Diode Characteristics

Fig. 13 - Typical Values of Reverse

Current Vs. Reverse Voltage

Reverse Current - I

R

(mA)

0.0001

0.001

0.01

0.1

1

10

100

0 5 10 15 20 25 30

R

100°C

75°C

50°C

25°C

Reverse Volta

g

e - V

(

V

)

125°C

A

T = 150°C

J

Fig. 12 -Typical Forward Voltage Drop

Characteristics

0.1

1

10

0.0 0.2 0.4 0.6 0.8 1.0

FM

F

Instantaneous Forward Current - I (A)

Forward Volta

g

e Drop - V

(

V

)

T = 150°C

T = 125°C

T = 25°C

J

J

J

Fig.14 - Maximum Allowable Ambient

Temp. Vs. Forward Current

0

20

40

60

80

100

120

140

160

0.0 0.5 1.0 1.5 2.0 2.5 3.0

F(AV)

A

Avera

g

e Forward Current - I

(

A

)

Allowable Ambient Temperature - (°C)

D = 3/4

D = 1/2

D =1/3

D = 1/4

D = 1/5

DC

V = 80% Rated

R = 100°C/W

Square wave

thJA

r

Forward Voltage Drop - V

F

(V)

P1-P3 P4-P6 P7-P8

IRF7526D1TR

Mfr. #:

Buy IRF7526D1TR

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH 30V 2A MICRO8

Lifecycle:

New from this manufacturer.

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