MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW)
MUN5130T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
V
OH
4.9
4.9
4.9
4.9
4.9
Vdc
Input Resistor
MUN5111T1, SMUN5111T1
MUN5112T1, SMUN5112T1
MUN5113T1, SMUN5113T1
MUN5114T1, SMUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
MUN5133T1, SMUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
Resistor Ratio
MUN5111T1/SMUN5111T1/MUN5112T1/SMUN5112T1/
MUN5113T1/SMUN5113T1/MUN5136T1
MUN5114T1/SMUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1/NSVMUN5132T1
MUN5133T1/SMUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
R
1
/R
2
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
q
JA
= 833°C/W
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS MUN5111T1G, SMUN5111T1G
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40
50
1000
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
-25°C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
=-25°C
25°C
75°C
75°C
I
C
/I
B
= 10
50
010203040
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
0
T
A
=-25°C
25°C
75°C
25°C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS MUN5112T1G, SMUN5112T1G
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 9. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0
10 20 30
V
O
= 0.2 V
T
A
=-25°C
75°C
100
10
1
0.1
40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0 1 2 3 4
V
in
, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 11. Input Voltage versus Output Current
0.01
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
T
A
=-25°C
50
010 20 30 40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
25°C
I
C
/I
B
= 10
25°C
-25°C
V
CE
= 10 V
T
A
=75°C
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
75°C
25°C
T
A
=-25°C
V
O
= 5 V

MUN5135T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS PNP 202MW SC70-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union