MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS MUN5113T1G, SMUN5113T1G
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 12. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
010203040
75°C
25°C
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
-25°C
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
010
25°C
V
in
, INPUT VOLTAGE (VOLTS)
-25°C
50
010203040
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
123456789
Figure 16. Input Voltage versus Output Current
100
10
1
0.1
0 10 20 30 40
I
C
, COLLECTOR CURRENT (mA)
T
A
=-25°C
25°C
75°C
50
I
C
/I
B
= 10
T
A
=-25°C
25°C
T
A
=75°C
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
T
A
=75°C
V
O
= 0.2 V
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
http://onsemi.com
8
TYPICAL ELECTRICAL CHARACTERISTICS MUN5114T1G, SMUN5114T1G
10
1
0.1
010 20 30 4050
100
10
1
0 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8101520253035404550
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 17. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
020406080
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
T
A
=75°C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25°C
I
C
/I
B
= 10
T
A
=-25°C
T
A
=75°C
25°C
-25°C
V
O
= 5 V
V
O
= 0.2 V
25°C
T
A
=-25°C
75°C
75°C
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
http://onsemi.com
9
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1G, NSVMUN5132T1G
25°C
75°C
25°C
25°C
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 27. Input Voltage versus Output Current
I
C
, OUTPUT CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
35302520151050
I
C
, COLLECTOR CURRENT (mA)
120200
100
10
1
0.01
1000
V
CE(sat)
, MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
h
FE
, DC CURRENT GAIN
10
4
6050403020100
0
C
ob
, CAPACITANCE (pF)
1
2
5
7
100
6543210
0.01
1
10
I
C
, COLLECTOR CURRENT (mA)
10987
10
302520151050
0.1
1
454035 50
V
in
, INPUT VOLTAGE (VOLTS)
75°C
25°C
75°C
25°C
75°C
25°C
40 60 80 100
3
6
8
9
0.1
25°C
25°C

MUN5135T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS PNP 202MW SC70-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union