© Semiconductor Components Industries, LLC, 2012
March, 2012 Rev. 12
1 Publication Order Number:
MUN5111T1/D
MUN5111T1 Series,
SMUN5111T1,
NSVMUN5111T1Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
baseemitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC70/SOT323 package which is designed for low power
surface mount applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC70/SOT323 package can be soldered using wave or reflow.
The modified gullwinged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PNP SILICON
BIAS RESISTOR
TRANSISTORS
SC70/SOT323
CASE 419
STYLE 3
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R
1
R
2
MARKING DIAGRAM
ORDERING INFORMATION
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
http://onsemi.com
6x = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
6x MG
G
1
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
°C/W
Thermal Resistance, Junction-to-Ambient
R
q
JA
618 (Note 1)
403 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead
R
q
JL
280 (Note 1)
332 (Note 2)
°C/W
Junction and Storage Temperature Range T
J
, T
stg
55 to +150 °C
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
ORDERING INFORMATION AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN5111T1G,
SMUN5111T1G
SC70/SOT323
(PbFree)
6A 10 10 3,000/Tape & Reel
MUN5112T1G,
SMUN5112T1G
SC70/SOT323
(PbFree)
6B 22 22 3,000/Tape & Reel
MUN5113T1G,
SMUN5113T1G
SC70/SOT323
(PbFree)
6C 47 47 3,000/Tape & Reel
MUN5113T3G SC70/SOT323
(PbFree)
6C 47 47 10,000/Tape & Reel
MUN5113T1G SC70/SOT323
(PbFree)
6C 47 47 3,000/Tape & Reel
MUN5114T1G,
SMUN5114T1G
SC70/SOT323
(PbFree)
6D 10 47 3,000/Tape & Reel
MUN5115T1G (Note 3) SC70/SOT323
(PbFree)
6E 10 3,000/Tape & Reel
MUN5116T1G (Note 3) SC70/SOT323
(PbFree)
6F 4.7 3,000/Tape & Reel
MUN5130T1G (Note 3) SC70/SOT323
(PbFree)
6G 1.0 1.0 3,000/Tape & Reel
MUN5131T1G (Note 3) SC70/SOT323
(PbFree)
6H 2.2 2.2 3,000/Tape & Reel
MUN5132T1G,
NSVMUN5132T1G (Note 3)
SC70/SOT323
(PbFree)
6J 4.7 4.7 3,000/Tape & Reel
MUN5133T1G,
SMUN5133T1G (Note 3)
SC70/SOT323
(PbFree)
6K 4.7 47 3,000/Tape & Reel
MUN5134T1G (Note 3) SC70/SOT323
(PbFree)
6L 22 47 3,000/Tape & Reel
MUN5135T1G (Note 3) SC70/SOT323
(PbFree)
6M 2.2 47 3,000/Tape & Reel
MUN5136T1G SC70/SOT323
(PbFree)
6N 100 100 3,000/Tape & Reel
MUN5137T1G SC70/SOT323
(PbFree)
6P 47 22 3,000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
MUN5111T1 Series, SMUN5111T1, NSVMUN5111T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
100 nAdc
CollectorEmitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
500 nAdc
EmitterBase Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN5111T1, SMUN5111T1
MUN5112T1, SMUN5112T1
MUN5113T1, SMUN5113T1
MUN5114T1, SMUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
MUN5133T1, SMUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
CollectorBase Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 Vdc
CollectorEmitter Breakdown Voltage (Note 4) (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5111T1, SMUN5111T1
MUN5112T1, SMUN5112T1
MUN5113T1, SMUN5113T1
MUN5114T1, SMUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
MUN5133T1, SMUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
CollectorEmitter Saturation Voltage
(I
C
= 10 mA, I
E
= 0.3 mA)
MUN5130T1/MUN5131T1
(I
C
= 10 mA, I
B
= 5 mA)
(I
C
= 10 mA, I
B
= 1 mA)
MUN5115T1/MUN5116T1/MUN5132T1/NSVMUN5132T1/
MUN5133T1/SMUN5133T1/MUN5134T1
V
CE(sat)
0.25
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
MUN5111T1, SMUN5111T1
MUN5112T1, SMUN5112T1
MUN5114T1, SMUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1, NSVMUN5132T1
MUN5133T1, SMUN5133T1
MUN5134T1
MUN5135T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
MUN5113T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
MUN5136T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
MUN5137T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

MUN5136T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS PNP 202MW SC70-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union