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MUN5136T1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
MUN51
1
1T1 Series, SMUN51
1
1T1,
NSVMUN51
1
1T1 Series
http://onsemi.com
10
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133T1G, SMUN5133T1G
75
°
C
25
°
C
−
25
°
C
Figure 28. V
CE(sat)
versus I
C
Figure 29. DC Current Gain
Figure 30. Output Capacitance
Figure 31. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 32. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
°
C
25
°
C
T
A
=
−
25
°
C
75
°
C
25
°
C
T
A
=
−
25
°
C
75
°
C
25
°
C
T
A
=
−
25
°
C
0.01
35
25
15
5
0.01
0.1
30
5
1
3
7
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
=
5 V
V
O
=
0.2 V
MUN51
1
1T1 Series, SMUN51
1
1T1,
NSVMUN51
1
1T1 Series
http://onsemi.com
11
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135T1G
75
°
C
25
°
C
−
25
°
C
Figure 33. V
CE(sat)
versus I
C
Figure 34. DC Current Gain
Figure 35. Output Capacitance
Figure 36. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 37. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
°
C
25
°
C
T
A
=
−
25
°
C
75
°
C
25
°
C
T
A
=
−
25
°
C
75
°
C
25
°
C
T
A
=
−
25
°
C
0.01
35
25
15
5
0.01
0.1
30
10
12
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
=
5 V
V
O
=
0.2 V
MUN51
1
1T1 Series, SMUN51
1
1T1,
NSVMUN51
1
1T1 Series
http://onsemi.com
12
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1G
75
°
C
25
°
C
−
25
°
C
Figure 38. Maximum Collector V
oltage versus
Collector Current
Figure 39. DC Current Gain
Figure 40. Output Capacitance
Figure 41. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 42. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
7
6
5
4
3
2
1
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.01
1000
V
CE(sat)
, MAXIMUM COLLECTOR
VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
60
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
100
12
10
8
6
4
2
0
1
10
18
16
14
20
V
in
, INPUT VOL
T
AGE (VOL
TS)
I
C
/I
B
= 10
75
°
C
25
°
C
T
A
=
−
25
°
C
V
CE
= 10 V
75
°
C
25
°
C
T
A
=
−
25
°
C
V
O
= 5 V
V
O
= 0.2 V
75
°
C
25
°
C
T
A
=
−
25
°
C
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
MUN5136T1
Mfr. #:
Buy MUN5136T1
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS PNP 202MW SC70-3
Lifecycle:
New from this manufacturer.
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