IRFS/SL4010PbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.057mH
R
G
= 25Ω, I
AS
= 106A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤ 106A, di/dt ≤ 1319A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering echniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
R
θJC
value shown is at time zero
Static @ T
J
= 25°C (unless otherwise specified)
(BR)DSS
Drain-to-Source Breakdown Voltage
(BR)DSS
J
Breakdown Voltage Temp. Coefficient
DS(on)
Static Drain-to-Source On-Resistance
m
GS(th)
DSS
Drain-to-Source Leakage Current
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R
G(int)
Internal Gate Resistance ––– 2.0 –––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
gs
gd
Gate-to-Drain ("Miller") Charge
sync
Total Gate Charge Sync. (Q
g
gd
d(on)
r
d(off)
f
iss
oss
rss
Reverse Transfer Capacitance
oss
Effective Output Capacitance (Energy Related)
oss
Effective Output Capacitance (Time Related)
Diode Characteristics
S
Continuous Source Current
(Body Diode)
SM
(Body Diode)
SD
rr
J
R
J
F
rr
J
J
RRM
J
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
V
DS
= 25V, I
D
= 106A
I
D
= 106A
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
V
DS
= 50V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz See Fig.5
V
GS
= 0V, V
DS
= 0V to 80V See Fig.11
V
GS
= 0V, V
DS
= 0V to 80V
T
J
= 25°C, I
S
= 106A, V
GS
= 0V
integral reverse
p-n junction diode.
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 106A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
I
D
= 106A
R
G
= 2.7
V
GS
= 10V
V
DD
= 65V
I
D
= 106A, V
DS
=0V, V
GS
= 10V
pF
A
––– –––
––– –––
μA
nA
nC
ns
ns
nC
180
720