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NTST40H120CTG

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
October, 2016 − Rev. 1
1 Publication Order Number:
NTST40H120CT/D
NTST40H120CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These are Pb−Free Devices
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
TO−220AB
CASE 221A
STYLE 6
3
4
1
VERY LOW FORWARD VOLT-
AGE, SCHOTTKY BARRIER
RECTIFIERS 40 AMPERES,
120 VOLTS
1
3
2, 4
2
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
G = Pb−Free Package
AYWW
TS40H120G
AKA
TO−220AB
NTST40H120CTG
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
120 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 124°C) Per device
(Rated V
R
, T
C
= 132°C) Per diode
I
F(AV)
40
20
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 119°C) Per device
(Rated V
R
, Square Wave, 20 kHz, T
C
= 130°C) Per diode
I
FRM
80
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
250 A
Operating Junction Temperature T
J
−40 to +150 °C
Storage Temperature T
stg
−40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol NTST40H120CTG Unit
Maximum Thermal Resistance per Device
Junction−to−Case
Junction−to−Ambient
R
q
JC
R
q
JA
0.81
70
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 20 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
(I
F
= 20 A, T
J
= 125°C)
v
F
0.52
0.65
0.85
0.46
0.55
0.66
−
−
0.91
−
−
0.69
V
Maximum Instantaneous Reverse Current (Note 1)
(V
R
= 90 V, T
J
= 25°C)
(V
R
= 90 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
6
7
−
20
−
−
65
42
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
NTST40H120CTG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.41.21.00.80.60.40.20
0.1
1
10
100
1.21.00.8 1.40.60.40.20
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
10090806050402010
1.E−06
Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Diode
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
1001010.1
100
1000
10,000
1501109030100
0
5
10
15
20
25
30
35
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
T
A
= 150°C
T
A
= 125°C
T
A
= −40°C
T
A
= 25°C
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
30 70 110 120
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
10090806050402010
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
30 70 110 120
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
T
J
= 25°C
50 70 130
Square Wave
DC
R
q
JC
= 1.3°C/W
P1-P3P4-P5

NTST40H120CTG

Mfr. #:
Buy NTST40H120CTG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 40A 120V DUAL DIE TRENCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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