NTST40H120CTG

NTST40H120CTG
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Current Derating per Device Figure 8. Forward Power Dissipation
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
221614126420
0
2
4
8
10
12
16
18
Figure 9. Thermal Characteristics
t, PULSE TIME (s)
10001000.010.0010.00010.000010.000001
0.001
0.01
0.1
1
10
100
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
R(t) (°C/W)
T
C
, CASE TEMPERATURE (°C)
1501109030100
0
10
20
30
40
50
60
70
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
50 70 130
Square Wave
DC
R
q
JC
= 0.81°C/W
810 1820 24
6
14
Square Wave
DC
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
I
PK
/I
AV
= 20
1010.1
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
Junction−to−Ambient, PCB area 100 mm
2
, PCB
thk 1 oz, Die area 19.52 mm
2
, Active area 41.7%
ORDERING INFORMATION
Device Package Shipping
NTST40H120CTG TO−220AB
(Pb−Free)
50 Units / Rail
NTST40H120CTG
www.onsemi.com
5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.024 0.36 0.61
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
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NTST40H120CTG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 40A 120V DUAL DIE TRENCH
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