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BUK6Y20-30PX

P1-P3P4-P6P7-P9P10-P12P13-P14
Nexperia
BUK6Y20-30P
30 V, P-channel Trench MOSFET
T
j
(°C)
-75 22512525
aaa-026120
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
-75 22512525
aaa-026121
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature
aaa-028037
V
DS
(V)
-10
-1
-10
2
-10-1
-10
2
-10
-10
3
I
D
(A)
-1
DC; T
mb
= 25 °C
t
p
= 10 µs
100 µs
1 ms
Limit R
DSon
= V
DS
/I
D
10 ms
100 ms
Fig. 3. Safe operating area; junction to mounting base; continuous and peak drain currents as a function of
drain-source voltage
BUK6Y20-30P All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 7 June 2018 4 / 14
Nexperia
BUK6Y20-30P
30 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
- 1.8 2.3 K/W
aaa-028087
10
-1
10
-2
1
10
Z
th(j-mb)
(K/W)
10
-3
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
0
0.25
0.05
0.02
0.01
duty cycle = 1
0.75
0.33
0.50
0.10
0.20
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
BUK6Y20-30P All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 7 June 2018 5 / 14
Nexperia
BUK6Y20-30P
30 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
T
j
= 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V -30 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C -1.5 -2 -3 V
V
DS
= -30 V; V
GS
= 0 V; T
j
= 25 °C - - -1 µAI
DSS
drain leakage current
V
DS
= -30 V; V
GS
= 0 V; T
j
= 175 °C - - -100 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nAI
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= -10 V; I
D
= -8.6 A; T
j
= 25 °C - 14 20 mΩ
V
GS
= -10 V; I
D
= -8.6 A; T
j
= 175 °C - 21 30 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -5.4 A - 35 52 mΩ
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -2 A; T
j
= 25 °C - 53 - S
R
G
gate resistance f = 1 MHz - 7 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 24 28 nC
Q
GS
gate-source charge - 4.7 - nC
Q
GD
gate-drain charge
V
DS
= -15 V; I
D
= -8.6 A; V
GS
= -10 V
- 5.3 - nC
C
iss
input capacitance - 1408 - pF
C
oss
output capacitance - 277 - pF
C
rss
reverse transfer
capacitance
V
DS
= -15 V; f = 1 MHz; V
GS
= 0 V
- 158 - pF
t
d(on)
turn-on delay time - 7 - ns
t
r
rise time - 34 - ns
t
d(off)
turn-off delay time - 41 - ns
t
f
fall time
V
DS
= -15 V; I
D
= -8.6 A; V
GS
= -10 V;
R
G(ext)
= 6 Ω
- 24 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -41 A; V
GS
= 0 V; T
j
= 25 °C - -0.7 -1.2 V
t
rr
reverse recovery time - 23 - ns
Q
r
recovered charge
I
S
= -8.6 A; dI
S
/dt = 100 A/µs;
V
GS
= 0 V; V
DS
= -15 V; T
j
= 25 °C
- 13.4 - nC
BUK6Y20-30P All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 7 June 2018 6 / 14
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK6Y20-30PX

Mfr. #:
Buy BUK6Y20-30PX
Manufacturer:
Nexperia
Description:
MOSFET BUK6Y20-30P/SOT669/LFPAK
Lifecycle:
New from this manufacturer.
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