Nexperia
BUK6Y20-30P
30 V, P-channel Trench MOSFET
V
GS
(V)
0 -4-3-1 -2
aaa-028043
-10
-15
-5
-20
-25
I
D
(A)
0
Tj = 175 °C Tj = 25 °C
V
DS
> I
D
x R
DSon
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-028044
1.0
0.5
1.5
2.0
a
0
Fig. 10. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-028045
-2.0
-2.5
-1.5
-1.0
-0.5
-3.0
-3.5
V
GS(th)
(V)
0
min
typ
max
I
D
= -250 μA; V
DS
= V
GS
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
aaa-028046
V
DS
(V)
-10
-2
-10
2
-10-10
-1
-1
10
3
10
4
C
(pF)
10
2
C
iss
C
rss
C
oss
f = 1 MHz; V
GS
= 0 V
Fig. 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK6Y20-30P All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 7 June 2018 8 / 14
