© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 0
1 Publication Order Number:
NB4N11S/D
NB4N11S
3.3 V 1:2 AnyLevel Input
to LVDS Fanout Buffer /
Translator
The NB4N11S is a differential 1:2 Clock or Data Receiver and will
accept AnyLevel
TM
input signals: LVPECL, CML, LVCMOS,
LVTTL, or LVDS. These signals will be translated to LVDS and two
identical copies of Clock or Data will be distributed, operating up to
2.0 GHz or 2.5 Gb/s, respectively. As such, the NB4N11S is ideal for
SONET, GigE, Fiber Channel, Backplane and other Clock or Data
distribution applications.
The NB4N11S has a wide input common mode range from
GND + 50 mV to V
CC
50 mV. Combined with the 50 W internal
termination resistors at the inputs, the NB4N11S is ideal for
translating a variety of differential or single−ended Clock or Data
signals to 350 mV typical LVDS output levels.
The NB4N11S is functionally equivalent to the EP11, LVEP11,
SG11 or 7L11M devices and is offered in a small 3 mm X 3 mm
16−QFN package. Application notes, models, and support
documentation are available at www.onsemi.com.
Features
Maximum Input Clock Frequency > 2.0 GHz
Maximum Input Data Rate > 2.5 Gb/s
1 ps Maximum of RMS Clock Jitter
Typically 10 ps of Data Dependent Jitter
380 ps Typical Propagation Delay
120 ps Typical Rise and Fall Times
Functionally Compatible with Existing 3.3 V LVEL, LVEP, EP, and
SG Devices
TIME (58 ps/div)
Figure 2. Typical Output Waveform at 2.488 Gb/s with
PRBS 2
23−1
(V
INPP
= 400 mV; Input Signal DDJ = 14 ps)
VOLTAGE (130 mV/div)
Device DDJ = 10 ps
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
*For additional marking information, refer to
Application Note AND8002/D.
MARKING
DIAGRAM*
QFN−16
MN SUFFIX
CASE 485G
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
16
NB4N
11S
ALYW
1
1
Q0
Q0
Q1
Q1
D
D
V
TD
V
TD
Figure 1. Logic Diagram
NB4N11S
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2
Figure 3. NB4N11S Pinout, 16−pin QFN (Top View)
V
CC
NC V
EE
V
EE
V
CC
V
TD
D
D
V
TD
Q0
Q0
Q1
Q1
5678
16 15 14 13
12
11
10
9
1
2
3
4
NB4N11S
Exposed Pad (EP)
V
CC
V
CC
V
CC
Table 1. PIN DESCRIPTION
Pin Name I/O Description
1 Q0 LVDS Output
Non−inverted D output. Typically loaded with 100 W receiver termination
resistor across differential pair.
2 Q0 LVDS Output
Inverted D output. Typically loaded with 100 W receiver termination resistor
across differential pair.
3 Q1 LVDS Output
Non−inverted D output. Typically loaded with 100 W receiver termination
resistor across differential pair.
4 Q1 LVDS Output
Inverted D output. Typically loaded with 100 W receiver termination resistor
across differential pair.
5 V
CC
Positive Supply Voltage.
6 NC No Connect.
7 V
EE
Negative Supply Voltage.
8 V
EE
Negative Supply Voltage.
9 V
TD
Internal 50 W termination pin for D.
10 D LVPECL, CML, LVDS,
LVCMOS, LVTTL
Inverted Differential Clock/Data Input (Note 1).
11 D LVPECL, CML, LVDS,
LVCMOS, LVTTL
Non−inverted Differential Clock/Data Input (Note 1).
12 V
TD
Internal 50 W termination pin for D.
13 V
CC
Positive Supply Voltage.
14 V
CC
Positive Supply Voltage.
15 V
CC
Positive Supply Voltage.
16 V
CC
Positive Supply Voltage.
EP Exposed pad. The exposed pad (EP) on the package bottom must be
attached to a heat−sinking conduit. The exposed pad may only be
electrically connected to V
EE
.
1. In the differential configuration when the input termination pins(VTD0/VTD0, VTD1/ VTD1) are connected to a common termination voltage
or left open, and if no signal is applied on D0/D0, D1/D1 input, then the device will be susceptible to self−oscillation.
NB4N11S
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3
Table 2. ATTRIBUTES
Characteristics Value
Moisture Sensitivity (Note 2) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
ESD Protection Human Body Model
Machine Model
Charged Device Model
> 2 kV
> 200 V
> 1 kV
Transistor Count 225
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
2. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
Positive Power Supply GND = 0 V 3.8 V
V
IN
Positive Input GND = 0 V V
IN
V
CC
3.8 V
I
IN
Input Current Through R
T
(50 W Resistor)
Static
Surge
35
70
mA
mA
I
OSC
Output Short Circuit Current
Line−to−Line (Q to Q)
Line−to−End (Q or Q to GND)
Q or Q to GND
Q to Q
Continuous
Continuous
12
24
mA
T
A
Operating Temperature Range QFN−16 −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction−to−Ambient) (Note 3) 0 lfpm
500 lfpm
QFN−16
QFN−16
41.6
35.2
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) 1S2P (Note 3) QFN−16 4.0 °C/W
T
sol
Wave Solder Pb
Pb−Free
<3 Sec @ 248°C
<3 Sec @ 260°C
265
265
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 1S2P (1 signal, 2 power) with 8 filled thermal vias under exposed pad.

NB4N11SMNG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Clock Buffer LVDS FANOUT BUFF/ TRANS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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