NCP6324, NCV6324
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (V
IN
= 3.6 V, V
OUT
= 1.8 V, L = 1 mH, C = 10 mF, typical values are referenced to T
J
= 25°C, Min
and Max values are referenced to T
J
up to 125°C, unless other noted.)
Symbol Characteristics Test Conditions Min Typ Max Unit
SUPPLY VOLTAGE
V
IN
Input Voltage V
IN
Range (Note 10) 2.5 5.5 V
SUPPLY CURRENT
I
Q
V
IN
Quiescent Supply Current EN high, no load, no switching, PFM Mode
EN high, no load, Forced PWM Mode
30
5.7
mA
mA
I
SD
V
IN
Shutdown Current EN low (Note 9 for NCP6324) 1
mA
OUTPUT VOLTAGE
V
OUT
Output Voltage Range (Note 7) 0.6 V
IN
V
V
FB
FB Voltage PWM Mode 594 600 606 mV
FB Voltage in Load Regulation V
IN
= 3.6 V, I
OUT
from 200 mA to I
OUTMAX
,
PWM mode (Note 7)
−0.5 %/A
FB Voltage in Line Regulation I
OUT
= 200 mA, V
IN
from MAX (V
NOM
+
0.5 V, 2.5 V) to 5.5 V, PWM mode (Note 7)
0 %/V
D
MAX
Maximum Duty Cycle (Note 7) 100 %
OUTPUT CURRENT
I
OUTMAX
Output Current Capability (Note 7) 2.0 A
I
LIMP
Output Peak Current Limit P−Channel 2.3 2.8 3.3 A
I
LIMN
Output Peak Current Limit N−Channel 0.9 A
VOLTAGE MONITOR
V
INUV−
V
IN
UVLO Falling Threshold 2.4 V
V
INHYS
V
IN
UVLO Hysteresis 60 140 200 mV
V
PGL
Power Good Low Threshold V
OUT
falls down to cross the threshold
(percentage of FB voltage) (Note 8)
87 90 92 %
V
PGHYS
Power Good Hysteresis V
OUT
rises up to cross the threshold
(percentage of Power Good Low Threshold
(V
PGL
) voltage) (Note 8)
0 5 7 %
Td
PGH1
Power Good High Delay in Start Up From EN rising edge to PG going high.
(Note 8)
1.15 ms
Td
PGL1
Power Good Low Delay in Shut Down From EN falling edge to PG going low.
(Notes 7 and 8)
8
ms
Td
PGH
Power Good High Delay in Regulation From V
FB
going higher than 95% nominal
level to PG going high.
Not for the first time in start up. (Notes 7
and 8)
5
ms
Td
PGL
Power Good Low Delay in Regulation From V
FB
going lower than 90% nominal
level to PG going low. (Notes 7 and 8)
8
ms
VPG_L Power Good Pin Low Voltage Voltage at PG pin with 5 mA sink current
(Note 8)
0.3 V
PG_LK Power Good Pin Leakage Current 3.6 V at PG pin when power good valid
(Note 8)
100 nA
INTEGRATED MOSFETs
R
ON_H
High−Side MOSFET ON Resistance V
IN
= 3.6 V (Note 9 for NCP6324)
V
IN
= 5 V (Note 9 for NCP6324)
160
130
200
mW
R
ON_L
Low−Side MOSFET ON Resistance V
IN
= 3.6 V (Note 9 for NCP6324)
V
IN
= 5 V (Note 9 for NCP6324)
110
100
140
mW
7. Guaranteed by design, not tested in production.
8. Power Good function is for NCx6324B devices only.
9. Maximum value applies for T
J
= 85°C.
10.Operation above 5.5 V input voltage for extended periods may affect device reliability. At the first power−up, input voltage must be > 2.6 V.
NCP6324, NCV6324
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS (V
IN
= 3.6 V, V
OUT
= 1.8 V, L = 1 mH, C = 10 mF, typical values are referenced to T
J
= 25°C, Min
and Max values are referenced to T
J
up to 125°C, unless other noted.)
Symbol UnitMaxTypMinTest ConditionsCharacteristics
SWITCHING FREQUENCY
F
SW
Normal Operation Frequency 2.7 3.0 3.3 MHz
SOFT START
T
SS
Soft−Start Time Time from EN to 90% of output voltage
target
0.4 1 ms
CONTROL LOGIC
V
EN_H
EN Input High Voltage 1.1 V
V
EN_L
EN Input Low Voltage 0.4 V
V
EN_HYS
EN Input Hysteresis 270 mV
I
EN_BIAS
EN Input Bias Current 0.1 1
mA
V
MODE_H
MODE Input High Voltage (Note 11) 1.1 V
V
MODE_L
MODE Input Low Voltage (Note 11) 0.4 V
V
MODE_HYS
MODE Input Hysteresis (Note 11) 270 mV
I
MODE_BIAS
MODE Input Bias Current (Note 11) 0.1 1
mA
OUTPUT ACTIVE DISCHARGE
R_DIS
Internal Output Discharge Resistance from SW to PGND 75 500 700
W
THERMAL SHUTDOWN
T
SD
Thermal Shutdown Threshold 150 °C
T
SD_HYS
Thermal Shutdown Hysteresis 25 °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
11. Mode function is for NCx6324C devices only.
NCP6324, NCV6324
www.onsemi.com
6
TYPICAL OPERATING CHARACTERESTICS
Figure 3. Shutdown Current vs. Input Voltage
(EN = Low, T
A
= 255C)
Figure 4. Shtudown Current vs. Temperature
(EN = Low, V
IN
= 3.6 V)
Figure 5. Quiescent Current vs. Input Voltage
(EN = High, Open Loop, V
OUT
= 1.8 V,
T
A
= 255C)
Figure 6. Quiescent Current vs. Temperature
(EN = High, Open Loop, V
OUT
= 1.8 V,
V
IN
= 3.6 V)
Figure 7. Efficiency vs. Output Current and
Input Voltage (V
OUT
= 1.05 V, T
A
= 255C)
Figure 8. Efficiency vs. Output Current and
Input Voltage (V
OUT
= 1.8 V, T
A
= 255C)
2
1.5
1
0.5
0
2.5 3 3.5 4 4.5 5 5.5
V
IN
(V)
I
SD
(mA)
2
1.5
1
0.5
0
−40 −15 10 35 60 85
Temperature (°C)
I
SD
(mA)
V
IN
= 5.5 V
V
IN
= 3.6 V
V
IN
= 2.5 V
35
2.5 3 3.5 4 4.5 5 5.5
V
IN
(V)
I
Q
(mA)
30
25
20
35
V
IN
(V)
I
Q
(mA)
30
25
20
−40 −15 10 35 60 85
V
IN
= 5.5 V
V
IN
= 3.6 V
V
IN
= 2.5 V
90
0 400 800 1600 2000
I
OUT
(mA)
EFFICIENCY (%)
V
IN
= 5.5 V
V
IN
= 3.6 V
V
IN
= 2.5 V
85
80
75
70
65
60
55
50
1200 0 400 800 1600 20001200
90
EFFICIENCY (%)
85
80
75
70
65
60
55
50
I
OUT
(mA)
V
IN
= 5.5 V
V
IN
= 3.6 V
V
IN
= 2.5 V
95

NCV6324BMTAAWTBG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Voltage Regulators DCDC BUCK CONVERTER WITH
Lifecycle:
New from this manufacturer.
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