SUP/SUB85N04-03
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA 40
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA 1 3
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V
100 nA
V
DS
= 40 V, V
GS
= 0 V 1
Zero Gate Voltage Drain Current I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125C 50
mA
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175C 250
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V 120 A
V
GS
= 10 V, I
D
= 30 A 0.0029 0.0035
Drain-Source On-State Resistance
a
r
V
GS
= 4.5 V, I
D
= 20 A
0.0044 0.0053
W
-
-
on
V
GS
= 10 V, I
D
= 30 A, T
J
= 125C 0.0053
V
GS
= 10 V, I
D
= 30 A, T
J
= 175C 0.0063
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A 30 S
Dynamic
b
Input Capacitance C
iss
6860
Output Capacitance C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1320
pF
Reverse Transfer Capacitance C
rss
800
Total Gate Charge
c
Q
g
165 250
Gate-Source Charge
c
Q
gs
V
DS
= 30 V, V
GS
= 10 V, I
D
= 85 A
25
nC
Gate-Drain Charge
c
Q
gd
55
Turn-On Delay Time
c
t
d(on)
15 25
Rise Time
c
t
r
V
DD
= 30 V, R
L
= 0.35 W
90 135
Turn-Off Delay Time
c
t
d(off)
I
D
^ 85 A, V
GEN
= 10 V, R
G
= 2.5 W
95 145
Fall Time
c
t
f
125 195
Source-Drain Diode Ratings and Characteristics (T
C
= 25C)
b
Continuous Current I
S
85
Pulsed Current I
SM
240
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.1 1.4 V
Reverse Recovery Time t
rr
60 90 ns
Peak Reverse Recovery Current I
RM(REC)
I
F
= 85 A, di/dt = 100 A/ms
2.6 4 A
Reverse Recovery Charge Q
rr
0.08 0.15 mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
