SUP85N04-03-E3

SUP/SUB85N04-03
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
    
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0
0.4
0.8
1.2
1.6
–50 –25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
T
J
– Junction Temperature (C) V
SD
– Source-to-Drain Voltage (V)
– Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
V
GS
= 10 V
I
D
= 30 A
T
J
= 25C
T
J
= 150C
(Normalized)
– On-Resistance (r
DS(on)
W)
0
30
36
42
48
54
60
–50 –25 0 25 50 75 100 125 150 175
T
J
– Junction Temperature (C)t
in
(Sec)
1000
10
0.00001 0.001 0.1 1
0.1
(a)I
Dav
0.01
I
AV
(A) @ T
A
= 150C
(V)V
(BR)DSS
I
D
= 250 mA
100
1
I
AV
(A) @ T
A
= 25C
0.0001
SUP/SUB85N04-03
Vishay Siliconix
New Product
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
www.vishay.com FaxBack 408-970-5600
2-5
 
0
20
40
60
80
100
0 25 50 75 100 125 150 175
Safe Operating Area
V
DS
– Drain-to-Source Voltage (V)
1000
10
0.1 1 10 100
Limited
by r
DS(on)
0.1
100
T
C
= 25C
Single Pulse
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
– Ambient Temperature (C)
– Drain Current (A)I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
–4
10
–3
10
–2
10
–1
1
Normalized Effective Transient
Thermal Impedance
10
0.2
0.1
Duty Cycle = 0.5
– Drain Current (A)I
D
1 ms
10 ms
100 ms
dc
10 ms
100 ms
Single Pulse
0.05
0.02
1
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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SUP85N04-03-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SUP90N06-6M0P-E3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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