Document Number: 001-67798 Rev. *F Page 4 of 16
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground
potential ...........................–0.3 V to +3.9 V (V
CCmax
+ 0.3 V)
DC Voltage Applied to Outputs
in High Z State
[2, 3]
............ –0.3 V to 3.9 V (V
CCmax
+ 0.3 V)
DC input voltage
[2, 3]
......... –0.3 V to 3.9 V (V
CCmax
+ 0.3 V)
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, Method 3015) ................................ > 2001 V
Latch up current...................................................... > 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[4]
CY621472E30LL Industrial –40 °C to +85 °C 2.2 V to 3.6 V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
45 ns
Unit
Min Typ
[5]
Max
V
OH
Output HIGH voltage I
OH
= –0.1 mA 2.0 – – V
I
OH
= –1.0 mA, V
CC
> 2.70 V 2.4 – – V
V
OL
Output LOW voltage I
OL
= 0.1 mA – – 0.4 V
I
OL
= 2.1 mA, V
CC
= 2.70 V – – 0.4 V
V
IH
Input HIGH voltage V
CC
= 2.2 V to 2.7 V 1.8 – V
CC
+ 0.3 V
V
CC
= 2.7 V to 3.6 V 2.2 – V
CC
+ 0.3 V
V
IL
Input LOW voltage V
CC
= 2.2 V to 2.7 V –0.3 – 0.6 V
V
CC
= 2.7 V to 3.6 V –0.3 – 0.8 V
I
IX
Input leakage current GND < V
I
< V
CC
–1 – +1 A
I
OZ
Output leakage current GND < V
O
< V
CC
, Output Disabled –1 – +1 A
I
CC
V
CC
operating supply current f = f
max
= 1/t
RC
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
–1520mA
f = 1 MHz – 2 2.5
I
SB1
[6]
Automatic CE power-down
current – CMOS inputs
CE
1
> V
CC
– 0.2 V, CE
2
0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
f = f
max
(address and data only),
f = 0 (OE, BHE, BLE and WE),
V
CC
= 3.60 V
–17A
I
SB2
[6]
Automatic CE Power down
current – CMOS inputs
CE
1
> V
CC
– 0.2 V or CE
2
< 0.2 V or
(BHE and BLE) > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= 3.60 V
–17A
Notes
2. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
3. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
4. Full device AC operation assumes a minimum of 100 s ramp time from 0 to V
CC(min)
and 200 s wait time after V
CC
stabilization.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
6. Chip enables (CE
1
and CE
2
) need to be tied to CMOS levels to meet the I
SB1
/ I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
