SIZ998DT-T1-GE3 Datasheet SIZ998DT-T1-GE3 | P1-P3

SiZ998DT

www.vishay.com

Vishay Siliconix

S16-0001-Rev. B, 11-Jan-16

1

Document Number: 62979

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual N-Channel 30 V (D-S) MOSFETs

Ordering Information:

SiZ998DT-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET

®

Gen IV power MOSFETs

•SkyFET

®

low-side MOSFET with integrated

Schottky

• 100 % R

g

and UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• CPU core power

• Computer / server peripherals

•POL

• Synchronous buck converter

• Telecom DC/DC

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 68 °C/W for channel-1 and 61 °C/W for channel-2.

g. T

C

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() (MAX.) I

D

(A)

a, g

Q

g

(TYP.)

Channel-1 30

0.0067 at V

GS

= 10 V 20

5.4 nC

0.0100 at V

GS

= 4.5 V 20

Channel-2 30

0.0028 at V

GS

= 10 V 60

13.2 nC

0.0038 at V

GS

= 4.5 V 60

PowerPAIR

®

6 x 5

Top View

1

6 mm

1

6 mm

5 mm

Bottom View

1

G

1

2

D

1

4

D

1

3

D

1

S

1

/D

2

(Pin 9)

D

1

S

2

5

S

2

6

G

2

8

S

2

7

D

1

S

2

N-Channel 2

MOSFET

G

1

S

1

/D

2

G

2

Schottky

Diode

N-Channel 1

MOSFET

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT

Drain-Source Voltage V

DS

30

V

Gate-Source Voltage V

GS

+20, -16

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

20

a

60

a

A

T

C

= 70 °C 20

a

60

a

T

A

= 25 °C 18.8

b, c

32.8

b, c

T

A

= 70 °C 15

c

26.2

b, c

Pulsed Drain Current (t = 100 μs) I

DM

90 130

Continuous Source Drain Diode Current

T

C

= 25 °C

I

S

16.8 27.4

T

A

= 25 °C 3.2

b, c

4

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

15 20

Single Pulse Avalanche Energy E

AS

11.25 20 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

20.2 32.9

W

T

C

= 70 °C 12.9 21.1

T

A

= 25 °C 3.8

b, c

4.8

b, c

T

A

= 70 °C 2.4

b, c

3.1

b, c

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL

CHANNEL-1 CHANNEL-2

UNIT

TYP. MAX. TYP. MAX.

Maximum Junction-to-Ambient

b, f

t  10 s R

thJA

26 33 21 26

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

4.76.233.8

SiZ998DT

www.vishay.com

Vishay Siliconix

S16-0001-Rev. B, 11-Jan-16

2

Document Number: 62979

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA Ch-1 30 - -

V

GS

= 0 V, I

D

= 250 μA Ch-2 30 - -

Gate Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA Ch-1 1.1 - 2.2

V

DS

= V

GS

, I

D

= 250 μA Ch-2 1.1 - 2.2

Gate Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V, -16 V

Ch-1 - - ± 100

nA

Ch-2 - - ± 100

Zero Gate Voltage Drain Current I

DSS

V

DS

= 30 V, V

GS

= 0 V

Ch-1 - - 1

μACh-2 - - 150

V

DS

= 30 V, V

GS

= 0 V, T

J

= 55 °C

Ch-1 - - 5

Ch-2 - - 3 mA

On-State Drain Current

b

I

D(on)

V

DS

 5 V, V

GS

= 10 V

Ch-1 20 - -

A

Ch-2 20 - -

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 10 V, I

D

= 15 A Ch-1 - 0.0047 0.0067



V

GS

= 10 V, I

D

= 19 A Ch-2 - 0.0022 0.0028

V

GS

= 4.5 V, I

D

= 12 A Ch-1 - 0.0065 0.0100

V

GS

= 4.5 V, I

D

= 15 A Ch-2 - 0.0030 0.0038

Forward Transconductance

b

g

fs

V

DS

= 10 V, I

D

= 15 A Ch-1 - 80 -

S

V

DS

= 10 V, I

D

= 19 A Ch-2 - 165 -

Dynamic

a

Input Capacitance C

iss

Channel-1

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

Channel-2

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

Ch-1 - 930 -

pF

Ch-2 - 2620 -

Output Capacitance C

oss

Ch-1 - 325 -

Ch-2 - 902 -

Reverse Transfer Capacitance C

rss

Ch-1 - 21 -

Ch-2 - 55 -

C

rss

/C

iss

Ratio

Ch-1 - 0.023 0.046

Ch-2 - 0.021 0.042

Total Gate Charge Q

g

V

DS

= 15 V, V

GS

= 10 V, I

D

= 20 A

Ch-1 - 12 18

nC

Ch-2 - 29.5 44.3

Channel-1

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 20 A

Channel-2

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 20 A

Ch-1 - 5.4 8.1

Ch-2 - 13.2 19.8

Gate-Source Charge Q

gs

Ch-1 - 3 -

Ch-2 - 7.1 -

Gate-Drain Charge Q

gd

Ch-1 - 0.75 -

Ch-2 - 1.3 -

Output Charge Q

oss

V

DS

= 15 V, V

GS

= 0 V

Ch-1 - 10 -

Ch-2 - 30 -

Gate Resistance R

g

f = 1 MHz

Ch-1 0.3 1.5 3



Ch-2 0.2 1.1 2.2

SiZ998DT

www.vishay.com

Vishay Siliconix

S16-0001-Rev. B, 11-Jan-16

3

Document Number: 62979

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Dynamic

a

Turn-On Delay Time t

d(on)

Channel-1

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

Channel-2

V

DD

= 15 V, R

L

= 1.5

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

Ch-1 - 15 30

ns

Ch-2 - 25 50

Rise Time t

r

Ch-1 - 65 130

Ch-2 - 65 130

Turn-Off Delay Time t

d(off)

Ch-1 - 10 20

Ch-2 - 17 34

Fall Time t

f

Ch-1 - 10 20

Ch-2 - 10 20

Turn-On Delay Time t

d(on)

Channel-1

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

Channel-2

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

Ch-1 - 10 20

Ch-2 - 15 30

Rise Time t

r

Ch-1 - 25 50

Ch-2 - 20 40

Turn-Off Delay Time t

d(off)

Ch-1 - 15 30

Ch-2 - 22 44

Fall Time t

f

Ch-1 - 10 20

Ch-2 - 10 20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C

Ch-1 - - 20

A

Ch-2 - - 60

Pulse Diode Forward Current (t = 100 μs) I

SM

Ch-1 - - 90

Ch-2 - - 130

Body Diode Voltage V

SD

I

S

= 10 A, V

GS

= 0 V Ch-1 - 0.8 1.2

V

I

S

= 2 A, V

GS

= 0 V Ch-2 - 0.41 0.53

Body Diode Reverse Recovery Time t

rr

Channel-1

I

F

= 10 A, dI/dt = 100 A/μs, T

J

= 25 °C

Channel-2

I

F

= 10 A, dI/dt = 100 A/μs, T

J

= 25 °C

Ch-1 - 30 60

ns

Ch-2 - 47 94

Body Diode Reverse Recovery Charge Q

rr

Ch-1 - 11 22

nC

Ch-2 - 55 110

Reverse Recovery Fall Time t

a

Ch-1 - 18 -

ns

Ch-2 - 27 -

Reverse Recovery Rise Time t

b

Ch-1 - 12 -

Ch-2 - 20 -

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

SIZ998DT-T1-GE3

SIZ998DT-T1-GE3

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