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SIZ998DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
SiZ998DT
www.vishay.com
Vishay Siliconix
S16-0001-Rev. B, 11-Jan-16
7
Document Number: 62979
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
SiZ998DT
www.vishay.com
Vishay Siliconix
S16-0001-Rev. B, 11-Jan-16
8
Document Number: 62979
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
26
52
78
104
130
00.511.52
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
V
GS
= 2 V
0
0.001
0.002
0.003
0.004
0.005
0 20406080
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 6 12 18 24 30
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 8 V; 15 V
I
D
= 19 A
0
5
10
15
20
0 0.7 1.4 2.1 2.8 3.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T = 25 °C
C
T
C
= 125 °C
T
C
= -55 °C
0
1010
2020
3030
4040
0 6 12 18 24 30
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
-On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 10 V, 19 A
V
GS
= 4.5 V, 15 A
SiZ998DT
www.vishay.com
Vishay Siliconix
S16-0001-Rev. B, 11-Jan-16
9
Document Number: 62979
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
0 255075100125150
I
R
- Reverse (A)
T
J
- Junction Temperature (°C)
V
DS
= 30 V
V
DS
= 10 V, 20 V
0.000
0.002
0.004
0.006
0.008
0.010
0246810
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
=19A
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 μs
10 s, 1 s
DC
Limited by I
DM
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ998DT-T1-GE3

Mfr. #:
Buy SIZ998DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Lifecycle:
New from this manufacturer.
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