VS-UFB250FA60

VS-UFB250FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
4
Document Number: 93626
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Current Rating (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Recovery Charge vs. dI
F
/dt
Fig. 9 - Typical Recovery Current vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Allowable Case Temperature (°C)
Current Rating (A)
0
20
40
60
80
100
120
140
160
180
0 50 100 150 200 250 300
DC
Square wave (D = 0.5)
80 % rated V
R
applied
Forward Power Loss (W)
Forward Current (A)
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
t
rr
(ns)
dI
F
/dt (A/µs)
50
100
150
200
250
300
350
400
450
500
100 1000
T
J
= 25 °C
T
J
= 150 °C
V
R
= 200 V
I
F
= 50 A
Q
rr
(nC)
dI
F
/dt (A/µs)
0
2000
4000
6000
8000
10 000
12 000
14 000
100 1000
T
J
= 25 °C
T
J
= 150 °C
V
R
= 200 V
I
F
= 50 A
I
rr
(A)
dI
F
/dt (A/µs)
0
10
20
30
40
50
60
70
80
90
100
100 1000
V
R
= 200 V
I
F
= 50 A
T
J
= 25 °C
T
J
= 150 °C
VS-UFB250FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
5
Document Number: 93626
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Reverse Recovery Parameter Test Circuit
Fig. 11 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-UFB250FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
6
Document Number: 93626
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
2 separate diodes,
parallel pin-out
F
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1
43
2
Lead Assignment
1
4
2
3

VS-UFB250FA60

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600 volt 250 amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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