Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 5: Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
V
GS
= 0 V, I
D
= 1 mA 650
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= 650 V
1 µA
V
GS
= 0 V, V
DS
= 650 V,
T
C
= 125 °C
100 µA
I
GSS
Gate-body leakage
current
V
DS
= 0 V, V
GS
= ±25 V
±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 2.5 A
0.71 0.82 Ω
Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
- 325 - pF
C
oss
Output capacitance - 16 - pF
C
rss
Reverse transfer
capacitance
- 0.85 - pF
C
oss eq.
(1)
Equivalent output
capacitance
V
DS
= 0 V to 520 V, V
GS
= 0 V - 109 - pF
R
G
Intrinsic gate
resistance
f = 1 MHz open drain - 5.6 - Ω
Q
g
Total gate charge
V
DD
= 520 V, I
D
= 5 A, V
GS
= 10 V
(see Figure 15: "Gate charge test
circuit")
- 11.5 - nC
Q
gs
Gate-source charge - 2.5 - nC
Q
gd
Gate-drain charge - 5 - nC
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS.
Table 7: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 325 V, I
D
= 2.5 A R
G
= 4.7 Ω,
V
GS
= 10 V (see Figure 14:
"Switching times test circuit for
resistive load" and Figure 19:
"Switching time waveform")
- 7.5 - ns
t
r
Rise time - 4.6 - ns
t
d(off)
Turn-off-delay time - 24 - ns
t
f
Fall time - 14.5 - ns
