STF9HN65M2

STF9HN65M2
Mfr. #:
STF9HN65M2
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
Lifecycle:
New from this manufacturer.
Datasheet:
STF9HN65M2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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HTML Datasheet:
STF9HN65M2 DatasheetSTF9HN65M2 Datasheet (P4-P6)STF9HN65M2 Datasheet (P7-P9)STF9HN65M2 Datasheet (P10-P12)STF9HN65M2 Datasheet (P13)
ECAD Model:
More Information:
STF9HN65M2 more Information STF9HN65M2 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
5.5 A
Rds On - Drain-Source Resistance:
820 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
11.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
20 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
MDmesh
Packaging:
Tube
Height:
4.6 mm
Length:
16.4 mm
Product:
Power MOSFET
Series:
STF9HN65M2
Transistor Type:
1 N-Channel
Type:
MDmesh M2
Width:
10.4 mm
Brand:
STMicroelectronics
Fall Time:
14.5 ns
Product Type:
MOSFET
Rise Time:
4.6 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
7.5 ns
Unit Weight:
0.011640 oz
Tags
STF9, STF
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
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Trans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
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STMICROELECTRONICS STF11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
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Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-250FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
***ark
Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes
***el Electronic
Low Power, Wideband, Voltage Feedback Operational Amplifier with Disable 6-SOT-23 -40 to 85
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***ical
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***nell
MOSFET, N CHANNEL, 650V, 7A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***itex
Transistor: N-MOSFET; unipolar; 650V; 10.1A; 0.65ohm; 28W; -40+150 deg.C; THT; TO220F
***ark
Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
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***ark
Mosfet, N-Ch, 600V, 8.4A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ical
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP
***ark
Mosfet, N-Ch, 500V, 7.6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.72Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
*** Electronics
STMICROELECTRONICS STF9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***ure Electronics
N-Channel 650 V 900 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 650V 5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Part # Mfg. Description Stock Price
STF9HN65M2
DISTI # V99:2348_17628778
STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
30
  • 1:$0.5101
STF9HN65M2
DISTI # V36:1790_13796776
STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
0
  • 2000000:$0.4303
  • 1000000:$0.4330
  • 200000:$0.6708
  • 20000:$1.0900
  • 2000:$1.1600
STF9HN65M2
DISTI # 497-16014-5-ND
STMicroelectronicsMOSFET N-CH 650V 5.5A TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
171In Stock
  • 5000:$0.4958
  • 2500:$0.5219
  • 500:$0.7082
  • 100:$0.8573
  • 50:$1.0438
  • 10:$1.1000
  • 1:$1.2300
STF9HN65M2
DISTI # 25948473
STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
30
  • 13:$0.5101
STF9HN65M2
DISTI # STF9HN65M2
STMicroelectronicsTrans MOSFET N-CH 600V 5.5A 3-Pin TO-220FP Tube (Alt: STF9HN65M2)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€0.5829
  • 500:€0.5999
  • 100:€0.6279
  • 50:€0.6669
  • 25:€0.7839
  • 10:€0.9789
  • 1:€1.5249
STF9HN65M2
DISTI # STF9HN65M2
STMicroelectronicsTrans MOSFET N-CH 600V 5.5A 3-Pin TO-220FP Tube - Rail/Tube (Alt: STF9HN65M2)
RoHS: Not Compliant
Min Qty: 2000
Container: Tube
Americas - 0
  • 20000:$0.4529
  • 10000:$0.4619
  • 6000:$0.4839
  • 4000:$0.5069
  • 2000:$0.5319
STF9HN65M2
DISTI # 56Y0949
STMicroelectronicsPTD HIGH VOLTAGE0
  • 10000:$0.4620
  • 2500:$0.4760
  • 1000:$0.5900
  • 500:$0.6750
  • 100:$0.7640
  • 10:$0.9940
  • 1:$1.1600
STF9HN65M2
DISTI # 511-STF9HN65M2
STMicroelectronicsMOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
RoHS: Compliant
1917
  • 1:$1.1600
  • 10:$0.9940
  • 100:$0.7640
  • 500:$0.6750
  • 1000:$0.5330
  • 2000:$0.4730
  • 10000:$0.4550
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of STF9HN65M2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.16
$1.16
10
$0.99
$9.94
100
$0.76
$76.40
500
$0.68
$337.50
1000
$0.53
$533.00
2000
$0.47
$946.00
10000
$0.46
$4 550.00
25000
$0.44
$11 025.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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