PartNumber | STF9HN65M2 | STF9N60M2 | STF9N65M2 |
Description | MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package | MOSFET N-CH 600V 0.72Ohm 55A MDMesh M2 | MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
Id Continuous Drain Current | 5.5 A | 5.5 A | 5 A |
Rds On Drain Source Resistance | 820 mOhms | 780 mOhms | 790 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 3 V | 2 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 11.5 nC | 10 nC | 10 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 20 W | 20 W | 20 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | MDmesh | MDmesh | MDmesh |
Packaging | Tube | Tube | Tube |
Height | 4.6 mm | - | - |
Length | 16.4 mm | - | - |
Product | Power MOSFET | - | Power MOSFET |
Series | STF9HN65M2 | STF9N60M2 | STF9N65M2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MDmesh M2 | - | - |
Width | 10.4 mm | - | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 14.5 ns | 13.5 ns | 18 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4.6 ns | 7.5 ns | 6.6 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 24 ns | 22 ns | 22.5 ns |
Typical Turn On Delay Time | 7.5 ns | 8.8 ns | 7.5 ns |
Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |