NXP Semiconductors
PESD5V0V2BMB
Very low capacitance bidirectional ESD protection diodes
PESD5V0V2BMB All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 17 August 2015 3 / 12
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
PPM
rated peak pulse current t
p
= 8/20 μs [1][2] - 9 A
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
ESD maximum ratings
IEC 61000-4-2; contact discharge [1][3] - 30 kV
IEC 61000-4-2; air discharge [1][3] - 30 kV
V
ESD
electrostatic discharge voltage
MIL-STD-883; human body model [1] - 10 kV
[1] Measured from pin 1 or 2 to pin 3.
[2] According to IEC 61000-4-5 and IEC 61643-321.
[3] Device stressed with ten non-repetitive ESD pulses.
t (µs)
0 403010 20
001aaa630
40
80
120
I
PP
(%)
0
e
- t
100 % I
PP
; 8 µs
50 % I
PP
; 20 µs
Fig. 2. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.6 ns to 1 ns
Fig. 3. ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff
voltage
T
amb
= 25 °C - - 5 V
I
RM
reverse leakage
current
V
RWM
= 5 V; T
amb
= 25 °C [1] - 1 10 nA
