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BTS410F2 E3043

P1-P3P4-P6P7-P9P10-P12P13-P15
PROFET
®
BTS 410 F2
Semiconductor Group 1 of 15 2003-Oct-01
Smart Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge (ESD) protection
Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
Most suitable for inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
+ V
bb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
1
)
With external current limit (e.g. resistor R
GND
=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Product Summary
Overvoltage protection V
bb(AZ)
65 V
Operating voltage
V
bb(on)
4.7 ... 42 V
On-state resistance R
ON
220
mΩ
Load current (ISO) I
L(ISO)
1.8 A
Current limitation I
L(SCr)
2.7 A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS 410 F2
Semiconductor Group 2 2003-Oct-01
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 V
bb
+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
(Load, L)
O Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) V
bb
65 V
Load dump protection
2
)
V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
3
)
= 2 Ω, R
L
= 6.6 Ω, t
d
= 400 ms, IN= low or high
V
Load dump
4
)
100 V
Load current (Short circuit current, see page 4) I
L
self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), T
C
≤ 25 °C P
tot
50 W
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V, T
j,start
= 150°C, T
C
= 150°C const.
I
L
= 1.8 A, Z
L
= 2.3 H, 0 Ω:
E
AS
4.5 J
Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD
1
2
kV
Input voltage (DC) V
IN
-0.5 ... +6 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
±5.0
±5.0
mA
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
2.5
75
K/W
SMD version, device on PCB
5
)
:
-- 35 --
2
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3
)
R
I
= internal resistance of the load dump test pulse generator
4
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
BTS 410 F2
Semiconductor Group 3 2003-Oct-01
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V
bb
= 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 1.6 A T
j
=25 °C:
T
j
=150 °C:
R
ON
--
190
390
220
440
mΩ
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V, T
C
= 85 °C
I
L(ISO)
1.6
1.8 -- A
Output current (pin 5) while GND disconnected or
GND pulled up, V
bb
=30 V, V
IN
= 0, see diagram
page 7, T
j
=-40...+150°C
I
L(GNDhigh)
-- -- 1 mA
Turn-on time IN to 90% V
OUT
:
Turn-off time IN
to 10% V
OUT
:
R
L
= 12 Ω, T
j
=-40...+150°C
t
on
t
off
12
5
--
--
125
85
µs
Slew rate on
10 to 30% V
OUT
, R
L
= 12 Ω, T
j
=-40...+150°C
dV /dt
on
-- -- 3 V/µs
Slew rate off
70 to 40% V
OUT
, R
L
= 12 Ω, T
j
=-40...+150°C
-dV/dt
off
-- -- 6 V/µs
Operating Parameters
Operating voltage
6
)
T
j
=-40...+150°C: V
bb(on)
4.7 -- 42 V
Undervoltage shutdown T
j
=25°C:
T
j
=-40...+150°C:
V
bb(under)
2.9
2.7
--
--
4.5
4.7
V
Undervoltage restart T
j
=-40...+150°C: V
bb(u rst)
-- -- 4.9 V
Undervoltage restart of charge pump
see diagram page 13
V
bb(ucp)
-- 5.6 6.0 V
Undervoltage hysteresis
∆V
bb(under)
= V
bb(u rst)
- V
bb(under)
∆V
bb(under)
-- 0.1 -- V
Overvoltage shutdown T
j
=-40...+150°C: V
bb(over)
42 -- 52 V
Overvoltage restart T
j
=-40...+150°C: V
bb(o rst)
40 -- -- V
Overvoltage hysteresis T
j
=-40...+150°C: ∆V
bb(over)
-- 0.1 -- V
Overvoltage protection
7
)
T
j
=-40...+150°C:
I
bb
=4 mA
V
bb(AZ)
65 70 -- V
Standby current (pin 3) T
j
=-40...+25°C:
V
IN
=0 T
j
= 150°C:
I
bb(off)
--
--
10
18
15
25
µA
Leakage output current (included in I
bb(off)
)
VIN=0
I
L(off)
-- -- 20 µA
Operating current (Pin 1)
8
)
, V
IN
=5 V,
Tj
=-40...+150°C
I
GND
-- 1 2.1 mA
6
)
At supply voltage increase up to V
bb
= 5.6 V typ without charge pump, V
OUT
≈V
bb
- 2 V
7
)
Meassured without load. See also V
ON(CL)
in table of protection functions and circuit diagram page 7.
8
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
P1-P3P4-P6P7-P9P10-P12P13-P15

BTS410F2 E3043

Mfr. #:
Buy BTS410F2 E3043
Manufacturer:
Infineon Technologies
Description:
IC HIGH SIDE PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
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