BTS 410 F2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V
bb
= 12 V unless otherwise specified
min typ max
Semiconductor Group 4 2003-Oct-01
Protection Functions
9
)
Initial peak short circuit current limit (pin 3 to 5)
10
)
,
( max 450 µs if V
ON
> V
ON(SC)
)
I
L(SCp)
Tj
=-40°C:
Tj
=25°C:
Tj
=+150°C:
4.0
3.5
2.0
--
5.5
3.5
11
10
7.5
A
Overload shutdown current limit I
L(SCr)
V
ON
= 8 V, T
j
= T
jt
(see timing diagrams, page 11) -- 2.7 -- A
Short circuit shutdown delay after input pos. slope
V
ON
> V
ON(SC)
, T
j
=-40..+150°C:
min value valid only, if input "low" time exceeds 60 µs
t
d(SC)
--
-- 450 µs
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
I
L
= 40 mA, T
j
=-40..+150°C:
V
ON(CL)
61
68 73 V
I
L
= 1 A, T
j
=-40..+150°C: -- -- 75
Short circuit shutdown detection voltage(pin 3 to 5) V
ON(SC)
-- 8.5 -- V
Thermal overload trip temperature T
jt
150 -- -- °C
Thermal hysteresis
∆
T
jt
-- 10 -- K
Reverse battery (pin 3 to 1)
11
)
-V
bb
-- -- 32 V
Diagnostic Characteristics
Open load detection current
(on-condition) T
j
=-40 ..150°C:
I
L (OL)
2
-- 150
mA
9
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
10
)
Short circuit current limit for max. duration of t
d(SC) max
=450 µs, prior to shutdown
11
)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
