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NTMFS4837NT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 6
1 Publication Order Number:
NTMFS4837N/D
NTMFS4837N
Power MOSFET
30 V, 74 A, Single N−Channel, SO−8FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
16
A
T
A
= 85°C 11.5
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.2 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
ID
10
A
T
A
= 85°C 7
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.88 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
74
A
T
C
= 85°C 53
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
47.2 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
148 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
39 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
I
L
= 22 A
pk
, L = 1.0 mH, R
G
= 25 W)
EAS 242 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4837N
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
5.0 mW @ 10 V
74 A
7.5 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4837NT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4837NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4837N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
2.65
°C/W
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
56.75
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
142.2
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
25
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 °C 1
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.7 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A 3.5 5.0
mW
I
D
= 15 A 3.5
V
GS
= 4.5 V
I
D
= 30 A 5.9 7.5
I
D
= 15 A 5.9
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 15 A 15 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
2048
pF
Output Capacitance C
OSS
444
Reverse Transfer Capacitance C
RSS
239
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
14.2 22
nC
Threshold Gate Charge Q
G(TH)
2.98
Gate−to−Source Charge Q
GS
5.7
Gate−to−Drain Charge Q
GD
6.7
Total Gate Charge Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 15 A
34.2
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0 W
14.2
ns
Rise Time t
r
55
Turn−Off Delay Time t
d(OFF)
19
Fall Time t
f
10
Turn−On Delay Time t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
8.5
ns
Rise Time t
r
25.6
Turn−Off Delay Time t
d(OFF)
25.2
Fall Time t
f
9.2
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4837N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.85 1.2
V
T
J
= 125°C 0.72
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
24
ns
Charge Time t
a
13
Discharge Time t
b
11
Reverse Recovery Charge Q
RR
14 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.93
nH
Drain Inductance L
D
0.005
Gate Inductance L
G
1.84
Gate Resistance R
G
2.8
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current &
Gate Voltage
1
100
0
3254
90
80
70
60
50
40
30
20
10
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3.8 V
T
J
= 25°C
V
GS
=
10 V to 4.5 V
3.6 V
3.4 V
3.2 V
4V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
V
DS
≥ 10 V
12 34 5678
0
100
90
80
70
60
50
40
30
20
10
I
D
, DRAIN CURRENT (A)
0
0.002
0.004
0.006
0.008
20 40 60 90
V
GS
= 4.5 V
V
GS
= 11.5 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
0.01
30 8010 50 70
0.001
0.003
0.005
0.007
0.009
0.003
0.005
0.006
0.008
0.010
0.012
0.014
0.016
0.004
0.007
0.009
0.011
0.013
0.015
T = 25°C
I
D
= 30 A
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
11.5
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
P1-P3P4-P6

NTMFS4837NT3G

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Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 10A SO-8FL
Lifecycle:
New from this manufacturer.
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