NTMFS4837NT3G

NTMFS4837N
http://onsemi.com
4
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current vs.
Voltage
Figure 7. Capacitance Variation Figure 8. GatetoSource & DraintoSource
Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1
10
100
1 10 100
t, TIME (ns)
t
r
t
d(on)
t
d(off)
t
f
R
G
, GATE RESISTANCE (W)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
1000
100
1000
10000
100000
510152025
30
I
DSS
, LEAKAGE (nA)
10
1
0
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
T
J
= 25°C
V
DS
, DRAINTOSOURCE VOLTAGE (V)
0
1000
2000
3000
10 5 0 5 10152025
C, CAPACITANCE (pF)
C
OSS
C
RSS
T
J
= 25°C
V
GS
V
DS
C
ISS
35
302520151050
12
10
8
6
4
2
0
Q
T
Q
gd
Q
gs
V
DD
= 15.0 V
V
GS
= 11.5 V
I
D
= 30 A
T
J
= 25°C
Q
G
, TOTAL GATE CHARGE (nC)
V
GS
, GATETOSOURCE VOLTAGE (V)
0.50 0.60 0.80
15
30
25
20
10
5
0
V
GS
= 0 V
T
J
= 25°C
V
SD
, SOURCETODRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
V
DS
, DRAINTOSOURCE VOLTAGE (V)
1.40
0.60
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
50 25025 50 75 125
I
D
= 30 A
V
GS
= 10 V & 4.5 V
100
1.00
150
0.80
1.60
1.80
1.20
NTMFS4837N
http://onsemi.com
5
Figure 11. Maximum Rated ForwardBiased
Safe Operating Range
Figure 12. Maximum Avalanche Energy vs,
Starting Junction Temperature
Figure 13. EAS vs. Pulse Width
25 50 75 100 125 150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
75
250
225
200
175
150
125
100
50
25
0
I
D
= 22 A
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
100
1000
10
1
100
10
1
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
V
GS
= 20 V
Single Pulse
T
C
= 25°C
10 ms
100 ms
10 ms
dc
100
100
10
1
1000
1
10
I
D
(A)
PULSE WIDTH (ms)
100 ms
125°C
100°C
25°C
NTMFS4837N
http://onsemi.com
6
PACKAGE DIMENSIONS
M 3.00 3.40
q 0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20
C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15 BSC
D1 4.50 4.90
D2 3.50 −−−
E 6.15 BSC
E1 5.50 5.80
E2 3.45 −−−
e 1.27 BSC
G 0.51 0.61
K 1.20 1.35
L 0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 BC
0.05
c
L
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.22
6.10
4.30
0.71
1.50
0.71
0.20
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
NTMFS4837N/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

NTMFS4837NT3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 10A SO-8FL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet