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VS-VSKT152/04PBF

P1-P3P4-P6P7-P9
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
1
Document Number: 94514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Thyristor/Thyristor, 150 A
(New INT-A-PAK Power Module)
FEATURES
• Electrically isolated by DBC ceramic (AI
2
O
3
)
• 3500 V
RMS
isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Simple mounting
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Battery charges
• Welders
• Power converters
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
T(AV)
150 A
Type Modules - Thyristor, Standard
Package INT-A-PAK
Circuit Two SCRs doubler circuit
New INT-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
85 °C 150 A
I
T(RMS)
330
A
I
TSM
50 Hz 4000
60 Hz 4200
I
2
t
50 Hz 80
kA
2
s
60 Hz 73
I
2
t 800 kA
2
s
V
RRM
400 V
T
Stg
Range -40 to 150
°C
T
J
Range -40 to 125
VOLTAGE RATINGS
TYPE NUMBER
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
/V
DSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
/I
DRM
AT 125 °C
mA
VS-VSKT152/04PbF 400 500 50
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
2
Document Number: 94514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction half sine wave
150 A
85 °C
Maximum RMS on-state current I
T(RMS)
As AC switch 330
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
4000
t = 8.3 ms 4200
t = 10 ms
100 % V
RRM
reapplied
3350
t = 8.3 ms 3500
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
80
kA
2
s
t = 8.3 ms 73
t = 10 ms
100 % V
RRM
reapplied
56
t = 8.3 ms 51
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 800 kA
2
s
Value of threshold voltage V
T(TO)
T
J
maximum
0.82 V
On-state slope resistance r
t
1.44 m
Maximum on-state voltage drop V
TM
I
pk
= x I
T(AV)
, T
J
= 25 °C 1.48 V
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time t
gd
T
J
= 25 °C
Gate current = 1 A, dl
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
1
μs
Typical rise time t
gr
2
Typical turn-off time t
q
I
TM
= 300 A, - dl/dt = 15 A/μs; T
J
= T
J
maximum
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
50 to 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
I
RRM,
I
DRM
T
J
= 125 °C 50 mA
RMS insulation voltage V
INS
50 Hz, circuit to base, all terminals shorted, t = 1 s 3500 V
Critical rate of rise of off-state voltage dV/dt T
J
= T
J
maximum, exponential to 67 % rated V
DRM
1000 V/μs
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
3
Document Number: 94514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
t
p
5 ms, T
J
= T
J
maximum 12
W
Maximum average gate power P
G(AV)
f = 50 Hz, T
J
= T
J
maximum 3
Maximum peak gate current I
GM
t
p
5 ms, T
J
= T
J
maximum
3A
Maximum peak negative
gate voltage
- V
GT
10
V
Maximum required DC gate
voltage to trigger
V
GT
T
J
= - 40 °C
Anode supply = 6 V,
resistive load; R
a
= 1
4
T
J
= 25 °C 2.5
T
J
= T
J
maximum 1.7
Maximum required DC gate
current to trigger
I
GT
T
J
= - 40 °C 270
mAT
J
= 25 °C 150
T
J
= T
J
maximum 80
Maximum gate voltage
that will not trigger
V
GD
T
J
= T
J
maximum, rated V
DRM
applied
0.3 V
Maximum gate current
that will not trigger
I
GD
10 mA
Maximum rate of rise of
turned-on current
dI/dt T
J
= T
J
maximum, I
TM
= 400 A rated V
DRM
applied 300 A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range
T
J
- 40 to 125
°C
Maximum storage
temperature range
T
Stg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
R
thJC
DC operation 0.18
K/W
Maximum thermal resistance,
case to heatsink per module
R
thCS
Mounting surface smooth, flat and greased 0.05
Mounting
torque ± 10 %
IAP to heatsink
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
4 to 6 Nm
busbar to IAP
Approximate weight
200 g
7.1 oz.
Case style INT-A-PAK
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSKT152/04PbF 0.007 0.010 0.013 0.016 0.017 0.009 0.012 0.014 0.016 0.017 K/W
P1-P3P4-P6P7-P9

VS-VSKT152/04PBF

Mfr. #:
Buy VS-VSKT152/04PBF
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 400 Volt 150 Amp
Lifecycle:
New from this manufacturer.
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