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VS-VSKT152/04PBF

P1-P3P4-P6P7-P9
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
4
Document Number: 94514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
)C°( erutarepmeT esaC elbawollA mumixaM
Average On-state Current (A)
80
90
100
110
120
130
0 20406080100120140160
30˚
60˚
90˚
120˚
180˚
Conduction Angle
VSKT152
RthJC (DC) = 0.182 K/W
Average On-state Current (A)
)C°( erutarepmeT esaC elbawollA mumixaM
60
70
80
90
100
110
120
130
0 50 100 150 200 25
0
30˚
60˚
90˚
180˚
DC
120˚
VSKT152
RthJC (DC) = 0.182 K/W
Conduction Period
)W( ssoL rewoP etats-nO
egare
vA
mumix
a
M
Average On-state Current (A)
0
20
40
60
80
100
120
140
160
180
200
220
0 20 40 60 80 100 120 140 16
0
RMS Limit
Conduction Angle
180˚
120˚
90˚
60˚
30˚
VSKT152
Tj = 125˚C
)W( ssoL rewoP etats-nO
egarev
A
mum
ixa
M
Average On-state Current (A)
0
50
100
150
200
250
300
0 50 100 150 200 25
0
DC
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Period
VSKT152
Tj = 125˚C
Number Of Equal Amplitude Half Cycle Current Pulses (N)
)A( t
n
e
r
r
uC
etats-nO ev
aW
en
i
S fl
a
H
k
aeP
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
11010
0
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
VSKT152
Per Junction
Pulse Train Duration (s)
)
A(
tn
e
rru
C eta
t
s
-
nO
e
va
W
e
niS fl
a
H k
a
eP
1500
2000
2500
3000
3500
4000
4500
0.01 0.1 1
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
VSKT152
Per Junction
Versus Pulse Train Duration. Control
Initial Tj = 125˚C
No Voltage Reapplied
Rated Vrrm Reapplied
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
5
Document Number: 94514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
Maximum Allowable Ambient Temperature (°C)
)W( ssoL rewoP etats-nO latoT mumixaM
Total RMS Output Current (A)
025507510012
5
0.04 K/W
0.08 K/W
0.12 K/W
0.16 K/W
0.4 K/W
0.25 K/W
0.6 K/W
1 K/W
RthSA = 0.01 K/W - Delta R
0
100
200
300
400
500
0 50 100 150 200 250 300 350
180˚
120˚
90˚
60˚
30˚
Conduction Angle
VSKT152
Per Module
Tj = 125˚C
)W( ssoL rewoP
l
atoT mu
m
ixaM
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
0255075100125
0.04 K/W
0.12 K/W
0.2 K/W
0.35 K/W
0.6 K/W
RthSA
= 0.01 K/W
-
Delta R
0.08 K/W
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300
2 x VSKT152
Single Phase Bridge
Connected
Tj = 125˚C
180˚
(Sine)
180˚
(Rect)
)W( sso
L re
w
o
P
lat
o
T mu
m
ix
aM
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
0255075100125
0.08 K/W
0.1 K/W
0.16 K/W
0.25 K/W
0.4 K/W
1
K/W
RthSA = 0.04 K/W - Delta R
0
200
400
600
800
1000
1200
1400
0 100 200 300 400 50
0
120˚
(Rect)
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
6
Document Number: 94514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance Z
thJC
Characteristics
Fig. 12 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
0.5 1 1.5 2 2.5
VSKT152
Per Junction
Tj = 25˚C
Tj = 125˚C
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4) (3)
(2) (1)
TJ = -40 ˚
C
TJ = 25
˚C
TJ = 125
˚C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
Frequency Limited by PG(AV)
VSKT152
P1-P3P4-P6P7-P9

VS-VSKT152/04PBF

Mfr. #:
Buy VS-VSKT152/04PBF
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 400 Volt 150 Amp
Lifecycle:
New from this manufacturer.
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