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EV1HMC1099LP5D

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Data Sheet HMC1099
Rev. A | Page 3 of 16
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 0.01 GHz to 0.4 GHz.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
FREQUENCY RANGE 0.01 0.4 GHz
GAIN
Small Signal Gain 18 20 dB
Gain Flatness ±1 dB
RETURN LOSS
Input 12 dB
Output 15 dB
POWER
Output Power for 4 dB Compression P4dB 40 dBm
Power Gain for P4dB Compression 15 dB
Saturated Output Power P
SAT
40.5 dBm >10 W saturated output power
Power Gain for P
SAT
13 dB
Power Added Efficiency PAE 73 %
OUTPUT THIRD-ORDER INTERCEPT IP3 49 dBm Measurement taken at P
OUT
/tone = 30 dBm
NOISE FIGURE 8 dB
TOTAL SUPPLY CURRENT I
DD
100 mA Adjust the gate bias control voltage (V
GG
) between
−8 V to 0 V to achieve an I
DD
= 100 mA typical
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 0.4 GHz to 0.7 GHz.
Table 2.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.4 0.7 GHz
GAIN
Small Signal Gain 16.5 18.5 dB
Gain Flatness
±0.25
dB
RETURN LOSS
Input 9.5 dB
Output 14 dB
POWER
Output Power for 4 dB Compression P4dB 40.5 dBm
Power Gain for P4dB Compression 14 dB
Saturated Output Power
P
SAT
40.5
dBm
>10 W saturated output power
Power Gain for P
SAT
13 dB
Power Added Efficiency PAE 69 %
OUTPUT THIRD-ORDER INTERCEPT IP3 48 dBm Measurement taken at P
OUT
/tone = 30 dBm
NOISE FIGURE 5.5 dB
TOTAL SUPPLY CURRENT I
DD
100 mA Adjust the gate bias control voltage (V
GG
) between
−8 V to 0 V to achieve an I
DD
= 100 mA typical
HMC1099 Data Sheet
Rev. A | Page 4 of 16
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 0.7 GHz to 1.1 GHz.
Table 3.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.7 1.1 GHz
GAIN
Small Signal Gain 16.5 18.5 dB
Gain Flatness ±0.5 dB
RETURN LOSS
Input 12 dB
Output 17 dB
POWER
Output Power for 4 dB Compression P4dB 41.5 dBm
Power Gain for P4dB Compression 14 dB
Saturated Output Power P
SAT
41.5 dBm >10 W saturated output power
Power Gain for P
SAT
13.5
dB
Power Added Efficiency PAE 69 %
OUTPUT THIRD-ORDER INTERCEPT
IP3
47
dBm
Measurement taken at P
OUT
/tone = 30 dBm
NOISE FIGURE 5 dB
TOTAL SUPPLY CURRENT I
DD
100 mA Adjust the gate bias control voltage (V
GG
) between
−8 V to 0 V to achieve an I
DD
= 100 mA typical
TOTAL SUPPLY CURRENT BY V
DD
Table 4.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
SUPPLY CURRENT I
DD
Adjust the gate bias control voltage (V
GG
) between −8 V to 0 V to achieve an
I
DD
= 100 mA typical
V
DD
= 24 V 100 mA
V
DD
= 28 V 100 mA
Data Sheet HMC1099
Rev. A | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
1
Rating
Drain Bias Voltage (V
DD
) 32 V dc
Gate Bias Voltage (V
GG
)
−8 V to 0 V dc
Radio Frequency (RF) Input Power (RFIN) 33 dBm
Maximum Forward Gate Current 4 mA
Maximum Voltage Standing Wave Ratio
(VSWR)
2
6:1
Channel Temperature 225°C
Maximum Peak Reflow Temperature (MSL3)
3
260°C
Continuous Power Dissipation, P
DISS
(T
A
= 85°C,
Derate 89 mW/°C Above 85°C)
12.5 W
Thermal Resistance (Junction to Back of
Paddle)
11.2°C/W
Storage Temperature Range −55°C to +150°C
Operating Temperature Range −40°C to +85°C
ESD Sensitivity (Human Body Model) Class 1B,
passed 500 V
1
When referring to a single function of a multifunction pin in the parameters,
only the portion of the pin name that is relevant to the Absolute Maximum
Rating is listed. For full pin names of multifunction pins, refer to the Pin
Configuration and Function Descriptions section.
2
Restricted by maximum power dissipation.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
3
See the Ordering Guide for additional information.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

EV1HMC1099LP5D

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Manufacturer:
Analog Devices Inc.
Description:
RF Development Tools Eval PCB ASSEMBLY
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