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74HC258DB,112

P1-P3P4-P6P7-P9P10-P12P13-P14
74HC258_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 14 April 2008 4 of 14
NXP Semiconductors
74HC258
Quad 2-input multiplexer; 3-state; inverting
6. Functional description
[1] H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] P
tot
derates linearly with 12 mW/K above 70 °C.
[3] P
tot
derates linearly with 8 mW/K above 70 °C.
[4] P
tot
derates linearly with 5.5 mW/K above 60 °C.
Table 3. Function table
[1]
Control Input Output
OE S nl0 nI1 nY
HXXXZ
LLLXH
LLHXL
LHXLH
LHXHL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
I
IK
input clamping current V
I
< −0.5 V or V
I
>V
CC
+ 0.5 V
[1]
- ±20 mA
I
OK
output clamping current V
O
< −0.5 V or V
O
>V
CC
+ 0.5 V
[1]
- ±20 mA
I
O
output current V
O
= −0.5 V to V
CC
+ 0.5 V - ±35 mA
I
CC
supply current - 70 mA
I
GND
ground current −70 - mA
T
stg
storage temperature −65 +150 °C
P
tot
total power dissipation T
amb
= −40 °C to +125 °C
DIP16 package
[2]
- 750 mW
SO16 package
[3]
- 500 mW
SSOP16 package
[4]
- 500 mW
74HC258_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 14 April 2008 5 of 14
NXP Semiconductors
74HC258
Quad 2-input multiplexer; 3-state; inverting
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 2.0 5.0 6.0 V
V
I
input voltage 0 - V
CC
V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature −40 - +125 °C
∆t/∆V input transition rise and fall rate V
CC
= 2.0 V - - 625 ns
V
CC
= 4.5 V - 1.67 139 ns
V
CC
= 6.0 V - - 83 ns
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
V
OH
HIGH-level
output voltage
V
I
=V
IH
or V
IL
I
O
= −20 µA; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= −20 µA; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= −20 µA; V
CC
= 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
I
O
= −6 mA; V
CC
= 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
I
O
= −7.8 mA; V
CC
= 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
V
OL
LOW-level
output voltage
V
I
=V
IH
or V
IL
I
O
=20µA; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
=20µA; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
=20µA; V
CC
= 6.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 6 mA; V
CC
= 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
O
= 7.8 mA; V
CC
= 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
=V
CC
or GND;
V
CC
= 6.0 V
--±0.1 - ±1.0 - ±1.0 µA
I
OZ
OFF-state
output current
V
I
=V
IH
or V
IL
; V
CC
= 6.0 V;
V
O
=V
CC
or GND; I
O
=0A
--±0.5 - ±5.0 - ±10 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
= 6.0 V
- - 8 - 80 - 160 µA
C
I
input
capacitance
- 3.5 - - - - - pF
74HC258_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 14 April 2008 6 of 14
NXP Semiconductors
74HC258
Quad 2-input multiplexer; 3-state; inverting
10. Dynamic characteristics
[1] t
pd
is the same as t
PHL
and t
PLH
.
[2] t
en
is the same as t
PZH
and t
PZL
.
[3] t
dis
is the same as t
PHZ
and t
PLZ
.
[4] t
t
is the same as t
THL
and t
TLH
.
[5] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N+∑(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
∑(C
L
× V
CC
2
× f
o
) = sum of outputs.
Table 7. Dynamic characteristics
GND = 0 V; for test circuit see Figure 8.
Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit
Min Typ Max Max
(85 °C)
Max
(125 °C)
t
pd
propagation delay nl0, nI1to nY; see Figure 6
[1]
V
CC
= 2.0 V - 30 95 120 145 ns
V
CC
= 4.5 V - 11 19 24 29 ns
V
CC
= 6.0 V - 9 16 20 25 ns
V
CC
= 5.0 V; C
L
= 15 pF - 9 - - - ns
S to n
Y; see Figure 6
V
CC
= 2.0 V - 47 140 175 210 ns
V
CC
= 4.5 V - 17 28 35 42 ns
V
CC
= 6.0 V - 14 24 30 36 ns
V
CC
= 5.0 V; C
L
= 15 pF - 14 - - - ns
t
en
enable time OE to nY; see Figure 7
[2]
V
CC
= 2.0 V - 39 140 175 210 ns
V
CC
= 4.5 V - 14 28 35 42 ns
V
CC
= 6.0 V - 11 24 30 36 ns
t
dis
disable time OE to nY; see Figure 7
[3]
V
CC
= 2.0 V - 55 150 190 225 ns
V
CC
= 4.5 V - 20 30 38 45 ns
V
CC
= 6.0 V - 16 26 33 38 ns
t
t
transition time see Figure 6
[4]
V
CC
= 2.0 V - 14 60 75 90 ns
V
CC
= 4.5 V - 5 12 15 18 ns
V
CC
= 6.0 V - 4 10 13 15 ns
C
PD
power dissipation
capacitance
per multiplexer;
V
I
= GND to V
CC
[5]
-55- - -pF
P1-P3P4-P6P7-P9P10-P12P13-P14

74HC258DB,112

Mfr. #:
Buy 74HC258DB,112
Manufacturer:
NXP Semiconductors
Description:
IC QUAD 2-IN MUX 3ST INV 16-SSOP
Lifecycle:
New from this manufacturer.
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